Types of tags

D. Gershon

DOI: https://doi.org/10.1038/357609A0

IF: 64.8

1992-06-18

Nature

Abstract:

What problem does this paper attempt to address?

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Yuan Yu,Chongjian Zhou,Tanmoy Ghosh,Carl‐Friedrich Schön,Yiming Zhou,Sophia Wahl,Mohit Raghuwanshi,Peter Kerres,Christophe Bellin,Abhay Shukla,Oana Cojocaru‐Mirédin,Matthias Wuttig

DOI: https://doi.org/10.1002/adma.202300893

IF: 29.4

2023-03-17

Advanced Materials

Abstract:Doping is usually the first step to tailor thermoelectrics. It enables precise control of the charge carrier concentration and concomitant transport properties. Doping should also turn GeSe, which features intrinsically a low carrier concentration, into a competitive thermoelectric. Yet, elemental doping fails to improve the carrier concentration. In contrast, alloying with Ag‐V‐VI2 compounds causes a remarkable enhancement of thermoelectric performance. This advance is closely related to a transition in the bonding mechanism, as evidenced by sudden changes in the optical dielectric constant ε∞, the Born effective charge, the maximum of the optical absorption ε2(ω), and the bond‐breaking behavior. These property changes are indicative of the formation of metavalent bonding (MVB), leading to an octahedral‐like atomic arrangement. MVB is accompanied by a thermoelectric‐favorable band structure featuring anisotropic bands with small effective masses and a large degeneracy. A quantum‐mechanical map, which distinguishes different types of chemical bonding, reveals that orthorhombic GeSe employs covalent bonding, while rhombohedral and cubic GeSe utilize MVB. The transition from covalent to MVB goes along with a pronounced improvement in thermoelectric performance. The failure or success of different dopants can be explained by this concept, which redefines doping rules and provides a "treasure map" to tailor p‐bonded chalcogenides. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Interplay between metavalent bonds and dopant orbitals enables the design of SnTe thermoelectrics

Guodong Tang,Yuqi Liu,Xiaoyu Yang,Yongsheng Zhang,Pengfei Nan,Pan Ying,Yaru Gong,Xuemei Zhang,Binghui Ge,Nan Lin,Xuefei Miao,Kun Song,Carl-Friedrich Schön,Matteo Cagnoni,Dasol Kim,Yuan Yu,Matthias Wuttig

DOI: https://doi.org/10.1038/s41467-024-53599-2

2024-10-23

Abstract:Engineering the electronic band structures upon doping is crucial to improve the thermoelectric performance of materials. Understanding how dopants influence the electronic states near the Fermi level is thus a prerequisite to precisely tune band structures. Here, we demonstrate that the Sn-s states in SnTe contribute to the density of states at the top of the valence band. This is a consequence of the half-filled p-p σ-bond (metavalent bonding) and its resulting symmetry of the orbital phases at the valence band maximum (L point of the Brillouin zone). This insight provides a recipe for identifying superior dopants. The overlap between the dopant s- and the Te p-state is maximized, if the spatial overlap of both orbitals is maximized and their energetic difference is minimized. This simple design rule has enabled us to screen out Al as a very efficient dopant to enhance the local density of states for SnTe. In conjunction with doping Sb to tune the carrier concentration and alloying with AgBiTe2 to promote band convergence, as well as introducing dislocations to impede phonon propagation, a record-high average ZT of 1.15 between 300 and 873 K and a large ZT of 0.36 at 300 K is achieved in Sn0.8Al0.08Sb0.15Te-4%AgBiTe2.
Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics

Jinxuan Zhong,Xiaoyu Yang,Tu Lyu,Gege Liang,Shengnan Zhang,Chaohua Zhang,Weiqin Ao,Fusheng Liu,Pengfei Nan,Binghui Ge,Lipeng Hu

DOI: https://doi.org/10.1016/j.scib.2024.02.015

IF: 18.9

2024-02-01

Science Bulletin

Abstract:In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

multidisciplinary sciences
Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

Meng Li,Min Hong,Xiao Tang,Qiang Sun,Wan-Yu Lyu,Sheng-Duo Xu,Liang-Zhi Kou,Matthew Dargusch,Jin Zou,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.nanoen.2020.104740

IF: 17.6

2020-01-01

Nano Energy

Abstract:Rock-salt structured GeTe has been reckoned as a promising medium temperature thermoelectric material due to its decent thermal conductivity and multiple electronic valence bands that can be easily modified. However, the applications of GeTe-based thermoelectric materials are strongly impeded by their excessive hole concentration and detrimental phase transition, which deteriorates both thermoelectric performance and mechanical robustness. In this study, we simultaneously solve these two issues by co-doping Ti and Sb in GeTe, achieving an ultrahigh figure-of-merit (ZT) of similar to 2.2 at 725 K with an average ZT over 2.0 plateauing from 625 to 755 K. Our X-ray spectroscopy analysis and electron microscopy investigation, coupled with first-principle calculation, attribute the extraordinary thermoelectric performance of Ge1-x-yTixSbyTe to the synergetic effects of: a) resonant bonding properties induced by symmetrized crystal lattice; b) high Seebeck coefficient and quality factor due to enhanced band degeneracy and effective mass; c) optimized hole concentration by the aliovalent Ti-Ge and Sb-Ge substitution; and d) minimized thermal conductivity due to the evident frequency-selective phonon scattering by diverse types of defects. Our study indicates that manipulating structure and bonding properties by crystal symmetry modification can explore new-type and high-performance thermoelectric candidates in GeTe and its derivatives, as well as other phase-transition materials.
Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe

Yuqi Liu,Xuemei Zhang,Pengfei Nan,Bo Zou,Qingtang Zhang,Yunxiang Hou,Shuang Li,Yaru Gong,Qingfeng Liu,Binghui Ge,Oana Cojocaru‐Mirédin,Yuan Yu,Yongsheng Zhang,Guang Chen,Matthias Wuttig,Guodong Tang

DOI: https://doi.org/10.1002/adfm.202209980

IF: 19

2022-10-01

Advanced Functional Materials

Abstract:A treasure map that separates different chemical bonding mechanisms is utilized to predict the miscibility of compounds. The solid solubility limit can be greatly improved by alloying compounds utilizing metavalent bonding. The increased solubility of Ag in SnTe by alloying with AgSbTe2 leads to a strong band alignment, ultralow lattice thermal conductivity, and exceptional maximum and average ZT values. SnTe is an emerging Pb‐free thermoelectric compound that has drawn significant attention for clean energy conversion. Chemical doping is routinely used to tailor its charge carrier concentration and electronic band structures. However, the efficacy of dopants is often limited by their small solubility. For example, only 0.5% Ag can be incorporated into the SnTe matrix. Yet, significantly more Ag (>7%) can be dissolved if SnTe is alloyed with AgSbTe2. This large enhancement of solubility can be understood from a chemical bonding perspective. Both SnTe and AgSbTe2 employ metavalent bonding as identified by an unusual bond‐rupture in atom probe tomography. Density functional theory calculations show that upon Ag doping the energy offset of the upmost two valence bands decreases significantly. This induces band alignment in SnTe, which results in an enhanced power factor over a broad temperature range. Moreover, the increased concentration of point defects and associated lattice strain lead to strong phonon scattering and softening, contributing to an extremely low κL of 0.30 Wm−1K−1. These synergistic effects contribute to a peak ZT of 1.8 at 873 K and a record‐high average ZT of ≈1.0 between 400 and 873 K in Sn0.87Mn0.08Sb0.08Te–5%AgSbTe2 alloy.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Xusheng Liu,Wu Wang,Yan Wang,Peng Li,Qiqi Tang,Baohai Jia,Zhenlong Huang,Yuan Lin,Binbin Jiang,Jiaqing He

DOI: https://doi.org/10.1002/aenm.202304029

IF: 27.8

2024-03-10

Advanced Energy Materials

Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Jianglong Zhu,Xiaobo Tan,Dong Pan,Yanni Luo,Ruiheng Li,Xuri Rao,Ruihuan Cheng,Chengliang Xia,Yue Chen,Qiang Sun,Ran Ang

DOI: https://doi.org/10.1016/j.cej.2023.148135

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:GeTe has attracted widespread attention as an ideal mid-temperature thermoelectric (TE) material, but its peak performance within a narrow mid-temperature range limits the conversion efficiency improvement of future TE devices. Here, to achieve the overall enhancement of GeTe over a broad temperature range, especially near room temperature, we demonstrate the functionally separated electronic band engineering strategy (resonance energy levels and band convergence) coupling the construction of high-density defects by designing multi-element SnSeIn-Sb co-doping. Fundamentally, to distinguish the functions of selected elements, it was found that SnSe alloying mainly promotes the band convergence of GeTe in elevated temperatures, In doping can create the resonance energy level for enhancing the TE performance near room temperature, and Sb can optimize symmetry and the overall carrier concentration, thereby jointly improving the effective mass and Seebeck coefficient. Moreover, the construction of various phonon scattering centers including high-density Ge micro/nano-precipitates, van der Waals gaps, dislocations, and strong stress fields, strongly inhibits phonon transport. Benefiting from these synergistic effects, a peak ZT of - 2.0 at 653 K, ZTave of - 1.2 in the range from 303 to 803 K, and Vickers microhardness of - 234 Hv are obtained in (Ge0.91In0.01Sb0.08Te)0.98(SnSe)0.02 sample. This study demonstrates a promising strategy to optimize thermoelectric performance by selectively co-doping functionally separated elements for developing high-performance TE materials.
Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Xin Li,Ming Liu,Muchun Guo,Changlei Niu,Hu He,Zihang Liu,Yuke Zhu,Xingyan Dong,Wei Cai,Fengkai Guo,Jiehe Sui

DOI: https://doi.org/10.1016/j.cej.2023.145820

IF: 15.1

2023-09-07

Chemical Engineering Journal

Abstract:The intrinsic carrier concentration in most thermoelectric materials deviates from the optimal range. Doping is the most effective way to optimize the carrier concentration, yet the accompanying increase of carrier-ionized impurity scattering usually results in undesirable loss in carrier mobility. For GeTe thermoelectric material with ultrahigh carrier concentration, selecting suitable dopants that could simultaneously reduce carrier concentration and improve carrier mobility for enhancing thermoelectric performance is crucial and difficult. Herein, we discover that dilute Er doping in GeTe can simultaneously reduce carrier concentration and increase carrier mobility. The reason of the increase of carrier mobility after Er doping is the reduction of Peierls distortion degree lowering the conductivity effective mass m * Drude and the decrease of Ge precipitates weakening the carrier scattering from Ge vacancies. Moreover, Er doping promotes the convergence of L and Σ valence bands and then increases density of states effective mass m *. Finally, by using Sb or Bi doping to reduce carrier concentration and lattice thermal conductivity, a high ZT ave of 1.22 and 1.26 within 300–773 K in Ge 0.93 Er 0.01 Bi 0.06 Te and Ge 0.89 Er 0.01 Sb 0.1 Te samples are realized, respectively. This work demonstrates that the rare earth metals Er doping can improve the thermoelectric performance of GeTe that will facilitate the exploration of advancing thermoelectric performance of GeTe and other materials via rare earth metals doping.

engineering, chemical, environmental
Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Jianglong Zhu,Ruiheng Li,Xiaobo Tan,Fan Feng,Qiang Sun,Pingan Song,Min Hong,Ran Ang

DOI: https://doi.org/10.1002/adfm.202417260

IF: 19

2024-11-11

Advanced Functional Materials

Abstract:The strong coupling between carrier and phonon transport significantly restricts the enhancement of thermoelectric performance in GeTe. Herein, Zn4Sb3 alloying enlarges the bandgap and promotes band convergence, while the addition of Pb doping modifies phonon dispersion and induces multiscale hierarchical structures. This stepwise modulation of carrier and phonon transport synergistically enhances the thermoelectric performance of GeTe. The strong coupling between carrier and phonon transport in thermoelectric (TE) materials severely limits improvements to the figure of merit (ZT). In this work, an approach is proposed to weaken electron‐phonon coupling, effectively enhancing the TE performance of GeTe. Alloying with Zn4Sb3 reduces excessive carrier concentration (nH), widens the bandgap, and promotes band convergence, synergistically improving charge carrier transport and ensuring a high power factor. Additional Pb doping further optimizes nH, boosting the power factor even more. Moreover, phonon transport is suppressed through Pb doping, as reflected in enhanced acoustic‐optical interactions due to the crossing of optical and acoustic modes, and a reduction in sound group velocity. This reinforced strong phonon scattering, combined with multi‐scale hierarchical nano/microstructures in the matrix, significantly reduces lattice thermal conductivity. As a result, a high ZT of 2.1 is achieved at 753 K in Ge0.9Pb0.1Te+0.9%Zn4Sb3. Alongside optimized mechanical performance, a high power density of 1.46 W cm−2 is realized at a temperature difference of 350 K in the fabricated 7‐pair TE module. The findings demonstrate the effectiveness of a stepwise optimization strategy for developing high‐performance TE materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Highly Effective Solid Solution towards High Thermoelectric and Mechanical Properties in Cu 3 SbSe 4 -Cu 2 GeSe 3 Bulk Materials via Quasi-Homogenization Doping

Hao Yin,Zi-Yuan Wang,Xi Yan,Yi-Xin Zhang,Xing Yang,Chong-Yu Wang,Zhen-Hua Ge,Jing Feng

DOI: https://doi.org/10.1021/acs.inorgchem.4c03226

IF: 4.6

2024-11-24

Inorganic Chemistry

Abstract:In the pursuit of high-performance thermoelectric materials, the challenge often lies in achieving high doping concentrations, which are essential for enhancing electrical properties. Traditional doping methods may prove insufficient, as the solid solution effect is not optimal. In this study, we introduce a doping approach termed "quasi-homogenization". This doping strategy utilizes two structurally and compositionally similar compounds, allowing for a more efficient solid solution of Ge in...

chemistry, inorganic & nuclear
Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Jing Tang,Bo Gao,Siqi Lin,Juan Li,Zhiwei Chen,Fen Xiong,Wen Li,Yue Chen,Yanzhong Pei

DOI: https://doi.org/10.1002/adfm.201803586

IF: 19

2018-06-27

Advanced Functional Materials

Abstract:Many efforts are recently devoted on improving thermoelectric SnTe as an environment—friendly alternative to conventional PbTe and successful approaches include valence band convergence, nanostructuring, and substantial/interstitial defects. Among these strategies, alloying SnTe with MnTe enables the most effective reduction in the valence band offset (between L and Σ) for a convergence due to its high solubility of ≈15%, yet there is no indication that the solubility of MnTe is high enough for fully optimizing the valence band structure and thus for maximizing the electronic performance. Here, a strategy is shown to increase the MnTe solubility up to ≈25% by alloying with 5% GeTe, which successfully locates the composition (20% MnTe) to optimize the valence band structure by converging a more degenerated Λ (as compared with band L) and Σ valence bands. Through a further alloying with Cu2Te, the resultant Cu‐interstitial defects enable a sufficient reduction in lattice thermal conductivity to its amorphous limit (0.4 W m−1 K−1). These electronic and thermal effects successfully realize a record‐high thermoelectric figure of merit, zT of 1.8, strongly competing with that of PbTe. This work demonstrates the validity of band manipulation and interstitial defects for realizing extraordinary thermoelectric performance in SnTe. GeTe is found to be an effective promoter for increasing the solubility of MnTe in SnTe, which leads to well‐converged valence bands for improving the thermoelectric performance. A further Cu2Te‐alloying reduces the lattice thermal conductivity to its amorphous limit and the combination of both electronic and thermal strategies realizes a record zT of 1.8 in SnTe.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Shuo Chen,Hui Bai,Junjie Li,Wenfeng Pan,Xianyan Jiang,Zhi Li,Zhiquan Chen,Yonggao Yan,Xianli Su,Jinsong Wu,Ctirad Uher,Xinfeng Tang

DOI: https://doi.org/10.1021/acsami.0c02155

2020-01-01

Abstract:Defect engineering is the core strategy for improving thermoelectric properties. Herein, cation doping along with modulation of cation vacancy has been developed in GeTe-based materials as an effective method to induce vacancy-based defects to boost their thermoelectric performance. A series of ternary compounds of Ge9Sb2Te12-x (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15) was prepared by vacuum-melting and annealing combined with the spark plasma sintering (SPS) process. The role of Sb doping and cation vacancy on thermoelectric properties was systematically investigated. It is found that alloying Sb2Te3 into GeTe increases the concentration of cation vacancies, which is corroborated by both positron annihilation measurements and theoretical calculations. The vacancies, stacking faults, and planar defect interactions determine the thermoelectric transport properties. Adjusting the deficiency of Te effectively tunes the concentration of cation vacancies and dopant defects in the structure. In turn, this tunes the carrier concentration close to its optimum. A high power factor of 32.6 mu W cm(-1) K-2 is realized for Ge9Sb2Te11.91 at 725 K. Moreover, large strains induced by the defect structures, including Sb dopant, vacancy, staking faults, as well as planar defects intensify phonon scattering, leading to a significant decrease in the thermal conductivity from 7.6 W m(-1) K-1 for pristine GeTe to Ge9Sb2Te11.85 at room temperature. All of the above contribute to a high ZT value of 2.1 achieved for the Ge9Sb2Te11.91 sample at 775 K.
Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Shanhong Wan,Shanshan Xiao,Mingquan Li,Xin Wang,Khak Ho Lim,Min Hong,Maria Ibáñez,Andreu Cabot,Yu Liu

DOI: https://doi.org/10.1002/smtd.202301377

IF: 12.4

2023-12-30

Small Methods

Abstract:This study presents a colloidal synthesis method to produce thermoelectric Cu3SbSe4 nanocrystals with high yield. Pb doping is employed to increase carrier concentration and effective mass, confirmed by experimental studies and theoretical calculations. Additionally, lattice distortions and other intriguing nanostructures are found to significantly reduce thermal conductivity. Consequently, the thermoelectric figure of merit zT is greatly enhanced. Developing cost‐effective and high‐performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3SbSe4 is a promising p‐type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution‐based approach is developed to synthesize high‐quality Cu3SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax) ≈ 0.85 at 653 K is obtained in Cu3Sb0.97Pb0.03Se4. This represents a 1.6‐fold increase compared to the undoped sample and exceeds most doped Cu3SbSe4‐based materials produced by solid‐state, demonstrating advantages of versatility and cost‐effectiveness using a solution‐based technology.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Metavalent Bonding in Cubic SnSe Alloys Improves Thermoelectric Properties over a Broad Temperature Range

Nan Lin,Shuai Han,Tanmoy Ghosh,Carl‐Friedrich Schön,Dasol Kim,Jonathan Frank,Felix Hoff,Thomas Schmidt,Pingjun Ying,Yuke Zhu,Maria Häser,Minghao Shen,Ming Liu,Jiehe Sui,Oana Cojocaru‐Mirédin,Chongjian Zhou,Ran He,Matthias Wuttig,Yuan Yu

DOI: https://doi.org/10.1002/adfm.202315652

IF: 19

2024-04-06

Advanced Functional Materials

Abstract:The phase transition of SnSe from Pnma to Fm‐3m is realized by tailoring the chemical bonds. All the dopants that drive the phase transition prevail in a well‐defined region of a chemical bonding map. While the Pnma SnSe utilizes covalent bonding, the Fm‐3m SnSe employs metavalent bonding. This metavalent bonding results in superior thermoelectric performance over a wide temperature range. Monocrystalline SnSe is one of the most promising thermoelectric materials with outstanding performance and a high abundance of constituting elements. However, polycrystalline SnSe, which is more robust for applications, only shows large figure‐of‐merit (zT) values in its high‐symmetry phase. Stabilizing the high‐symmetry phase at low temperatures can thus enhance the average zT value over a broad temperature range. In this work, the high‐symmetry rock‐salt SnSe phase is successfully obtained by alloying SnSe with AgVVI2 compounds (V = Sb, Bi; VI = Se, Te). These cubic SnSe phases show a unique portfolio of properties including a high optical dielectric constant, a large maximum of optical absorption, a large Born effective charge, and abnormal bond‐breaking behavior in laser‐assisted atom probe tomography. All of these characteristics are indicative of metavalent bonding. In contrast, the Pnma phase of SnSe employs covalent bonding. The enhanced symmetry at low temperatures is realized by tailoring chemical bonding. Concomitantly, zT near room temperature is increased by a factor of more than 10 from the pristine Pnma SnSe to Fm3 ̄ m SnSe alloys. This provides insights into the enhancement of the thermoelectric performance of SnSe and other chalcogenides over a broad temperature range by manipulating the chemical bonds.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Y. Shi,Y. Tang,K. Liu,S. Zhong,S. Chen,L. Yu,J. Wu,Q. Zhang,X. Su,X. Tang

DOI: https://doi.org/10.1016/j.mtphys.2022.100766

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:It has been found that the doped Ga has a distinct role in PbTe and PbSe compounds though they possess the same crystal structure. Therefore, to understand how the thermoelectric performance evolves in the Ga-doped PbTe1-xSex solid solution is crucial. Herein, we report that a maximum ZT value of 1.57 at 721 K and a high average ZT value of 1.13 in the temperature range of 300-843 K are attained for Pb0.98Ga0.02Te0.96Se0.04 compound. The experimental studies show that doping Ga into PbTe introduces a shallow level impurity state Ga3+ and a deep level associated with the Ga+ state simultaneously. Interestingly, upon Se-alloying all of the Ga+ are oxidized into Ga3+ at low temperatures, which increases the room-temperature carrier concentration from 1.16 x 10(19) cm(-3) to 2.17 x 10(19) cm(-3). This leads to an improved power factor of 3.04 mW m(-1) K-2 for Pb0.98Ga0.02Te0.96Se0.04 sample at 482 K. Additionally, Se-alloying further enhances the point defect phonon scattering and lowers the lattice thermal conductivity to 0.46 W m(-1) K-1 for Pb0.98Ga0.02Te0.96Se0.04 sample at 690 K. As a result, the ZT value is increased by about 112% compared with the maximum ZT of 0.74 for pristine PbTe. This work provides a new avenue for tuning the doping behavior of cation site dopant via alloying on anion site to further improve the ZT value in thermoelectric materials.
Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Meng Li,Qiang Sun,Sheng‐Duo Xu,Min Hong,Wan‐Yu Lyu,Ji‐Xing Liu,Yuan Wang,Matthew Dargusch,Jin Zou,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adma.202102575

IF: 29.4

2021-08-16

Advanced Materials

Abstract:Owing to high intrinsic figure-of-merit implemented by multi-band valleytronics, GeTe-based thermoelectric materials are promising for medium-temperature applications. Transition metals are widely used as dopants for developing high-performance GeTe thermoelectric materials. Herein, relevant work is critically reviewed to establish a correlation among transition metal doping, electronic quality factor, and figure-of-merit of GeTe. From first-principle calculations, it is found that Ta, as an undiscovered dopant in GeTe, can effectively converge energy offset between light and heavy conduction band extrema to enhance effective mass at high temperature. Such manipulation is verified by the increased Seebeck coefficient of synthesized Ge1−x−yTaxSbyTe samples from 160 to 180 µV K−1 at 775 K upon doping Ta, then to 220 µV K−1 with further alloying Sb. Characterization using electron microscopy also reveals the unique herringbone structure associated with multi-scale lattice defects induced by Ta doping, which greatly hinder phonon propagation to decrease thermal conductivity. As a result, a figure-of-merit of ≈2.0 is attained in the Ge0.88Ta0.02Sb0.10Te sample, reflecting a maximum heat-to-electricity efficiency up to 17.7% under a temperature gradient of 400 K. The rationalized beneficial effects stemming from Ta doping is an important observation that will stimulate new exploration toward high-performance GeTe-based thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Constructing Coated Grain Nanocomposites and Intracrystalline Precipitates to Simultaneously Improve the Thermoelectric and Mechanical Properties of SnTe by MgB2 and Sb Co‐Doping

Houjiang Yang,Luoqi Wu,Xiaobin Feng,Xiege Huang,Hongtao Wang,Bo Duan,Guodong Li,Pengcheng Zhai,Qingjie Zhang

DOI: https://doi.org/10.1002/adfm.202316344

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Thermoelectric materials should be highly efficient and mechanically robust to satisfy the requirements of engineering applications. Herein, an integrated optimization strategy to improve both the thermoelectric performance and mechanical strength of SnTe is proposed. First, grain boundary engineering is applied to SnTe via MgB2 doping. The decomposition of MgB2 results in the Mg-substituted SnTe solid solution and a special "core-shell" structure of Mg-B compounds coated SnTe grain remarkably reducing the lattice thermal conductivity. Subsequently, trivalent Sb atoms are introduced to tune the carrier concentration and optimize the electrical performance of the MgB2-doped sample. Sb-rich Sn-Te precipitates inside the grains further diminish the lattice's thermal conductivity. Consequently, a prominent improvement in average ZT of approximate to 117% is achieved for Sn0.78Sb0.16Te(MgB2)(0.09) compared to pristine Sn1.03Te. Moreover, the compressive yield strength and Vickers hardness of Sn0.78Sb0.16Te(MgB2)(0.09) are significantly increased by approximate to 168% and 176% relative to pristine Sn1.03Te, respectively. The quantitative strengthening models including grain boundary, dislocation, solid solution, intergranular, and precipitation strengthening in MgB2- and MgB2-Sb-doped Sn1.03Te samples are proposed, showing that the dominant strengthening mechanism is precipitation strengthening. This work provides an avenue for designing efficient and robust thermoelectric materials toward commercial application.
Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Juan Li,Qing Hu,Shan He,Xiaobo Tan,Qian Deng,Yan Zhong,Fujie Zhang,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c11599

2021-07-28

Abstract:The traditional thermoelectric material GeTe has drawn much attention recently because of the reported high thermoelectric performance of the rhombohedral phase in low-temperature ranges, where the split L and Σ band can be reconverged to have a small energy offset and thus high density of state effective mass according to the rhombohedral angle. In addition, In doping in GeTe is also reported to enhance the density of effective mass and therefore increase the Seebeck coefficient because of the induced resonant levels. In this work, In and Pb are doped in GeTe, and In doping leads to an increase in the rhombohedral angle and thus enhanced density of state effective mass in addition to the resonant effect. However, the improved Seebeck coefficient result from In doping is compensated for by a sharp reduction of Hall mobility, leading to no significant enhancement of electronic performance in the rhombohedral phase. By further Pb/Ge doping in the matrix Ge0.95In0.05Te for the optimization of carrier concentration and reduction of lattice thermal conductivity (as low as 0.7 W/mK), a zT as high as ∼1.2 at 550 K and average zT of ∼0.75 between 300 and 550 K are realized in this work, demonstrating GeTe as a promising candidate for near-room-temperature application.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11599.Temperature-dependent Hall mobility, thermoelectric properties of Ge1–xInxTe, temperature-dependent heat flow, XRD patterns and thermoelectric properties of Pb0.1Ge0.9–xInxTe, and Debye–Callaway model (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Doping of thermoelectric PbSe with chemically inert secondary phase nanoparticles

Chao-Feng Wu,Heng Wang,Qimin Yan,Tian-Ran Wei,Jing-Feng Li

DOI: https://doi.org/10.1039/c7tc03614k

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:For thermoelectrics, as well as many other applications of semiconductors, optimizing the carrier density is of great importance. This is normally done by atomic substitution. In this study, we present a result where systematic doping could arise from the least expected nanoparticles when composites are formed. We achieved this in a composite of PbSe and nanoparticle SiC. High carrier concentrations of up to 2 x 10(19) cm(-3) were achieved with SiC nanoparticle load up to 5 vol%. We believe this is due to interfaces that stabilized more defects than is allowed in bulk PbSe. Eventually, the nanoparticle-induced doping effect led to a decent thermoelectric performance with zT close to one at 800 K, comparable to optimized PbSe using conventional dopants. Our result indicates the good potential of this uncommon mechanism in some semiconductors for carrier concentration tuning where conventional doping has been found difficult.
Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Xiaoquan Hu,Yu Zhang,Yuanxin Jiang,Chubin Li,Qishuo Yang,Xiaoqiang Wang,Jiye Zhang,Shuankui Li,Kai Guo

DOI: https://doi.org/10.1039/d4qi00451e

IF: 7.779

2024-05-29

Inorganic Chemistry Frontiers

Abstract:Thermal conductivity ( κ ) is a crucial parameter in determining the thermoelectric figure of merit, zT , of thermoelectric materials. Consequently, numerous innovative strategies have been developed in recent years to reduce κ to the glass-like limit for enhanced thermoelectric properties. In this study, we employ a donor-like dopant, Sb, in GeTe to decrease both the electronic and lattice thermal conductivity. By reducing the hole concentration to 1.4 × 10 20 cm −3 in Ge 0.92 Sb 0.08 Te, we achieve a significantly low electronic thermal conductivity of 0.56 W m −1 K −1 at room temperature. Additionally, the strain and mass field fluctuations resulting from the presence of impurity atoms strengthen phonon scattering, effectively suppressing the lattice thermal conductivity. Furthermore, SiC nano-composites are intentionally introduced into the matrix, which leads to grain refinement. The grain boundaries and phase boundaries also contribute significantly to the reduction of lattice thermal conductivity, ultimately resulting in a small value of 0.42 W m −1 K −1 for the sample Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC at room temperature. The Vickers hardnesses for all composite samples are measured which reveal strengthened hardness, thanks to the grain refinement. The improved peak zT for the Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC sample is mostly attributed to the multiple reductions in κ . Through simulation, a high power density of 36 mW has been achieved for a single-leg Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC thermoelectric device with a temperature difference of Δ T = 438 K. Our contribution demonstrates that elemental doping combined with nanocompositing can effectively suppress the thermal conductivity from room temperature to high temperature, beneficial for enhanced thermoelectric properties.

chemistry, inorganic & nuclear

Types of tags

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Interplay between metavalent bonds and dopant orbitals enables the design of SnTe thermoelectrics

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Highly Effective Solid Solution towards High Thermoelectric and Mechanical Properties in Cu 3 SbSe 4 -Cu 2 GeSe 3 Bulk Materials via Quasi-Homogenization Doping

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Metavalent Bonding in Cubic SnSe Alloys Improves Thermoelectric Properties over a Broad Temperature Range

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Constructing Coated Grain Nanocomposites and Intracrystalline Precipitates to Simultaneously Improve the Thermoelectric and Mechanical Properties of SnTe by MgB2 and Sb Co‐Doping

Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Doping of thermoelectric PbSe with chemically inert secondary phase nanoparticles

Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity