Enhancing thermoelectric performance of Cu1.8S by Sb/Sn co-doping and incorporating multiscale defects to scatter heat-carrying phonons

Huaichao Tang
DOI: https://doi.org/10.1039/c9tc01096c
IF: 6.4
2019-01-01
Journal of Materials Chemistry C
Abstract:Cu-based chalcogenides have attracted increasing attention as a potential thermoelectric material due to their unique structural features, high element abundance, and low toxicity. In this paper, a series of Cu1.8SbxSnyS compositions (0.01 < x < 0.04, 0.015 < y < 0.045) were prepared by a simple method combining mechanical alloying (MA) and spark plasma sintering (SPS). The results demonstrate that Sb/Sn co-doping can optimize the hole concentration and substantially improve the dimensionless figure of merit (ZT) of copper-sulfide Cu1.8S. The highest ZT, up to 1.2 at 773 K, was realized for the Cu1.8Sb0.02Sn0.03S sample and maintained a high power factor of 975 W m(-1) K-2. The reduction in thermal conductivity was linked to the heterogeneous phase of Cu12Sb4S13 and Cu4SnS4. Remarkably, after four testing cycles, the variation in ZT was less than 2%, indicating a good stability of the Sb/Sn co-doped Cu1.8S materials.
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