Doping-mediated stabilization of copper vacancies to promote thermoelectric properties of Cu2−xS

Yu Zhang,Congcong Xing,Yu Liu,Maria Chiara Spadaro,Xiang Wang,Mengyao Li,Ke Xiao,Ting Zhang,Pablo Guardia,Khak Ho Lim,Ahmad Ostovari Moghaddam,Jordi Llorca,Jordi Arbiol,Maria Ibáñez,Andreu Cabot

DOI: https://doi.org/10.1016/j.nanoen.2021.105991

IF: 17.6

2021-07-01

Nano Energy

Abstract:Copper chalcogenides are outstanding thermoelectric materials for applications in the medium-high temperature range. Among different chalcogenides, while Cu2−xSe is characterized by higher thermoelectric figures of merit, Cu2−xS provides advantages in terms of low cost and element abundance. In the present work, we investigate the effect of different dopants to enhance the Cu2−xS performance and also its thermal stability. Among the tested options, Pb-doped Cu2−xS shows the highest improvement in stability against sulfur volatilization. Additionally, Pb incorporation allows tuning charge carrier concentration, which enables a significant improvement of the power factor. We demonstrate here that the introduction of an optimal additive amount of just 0.3% results in a threefold increase of the power factor in the middle-temperature range (500–800 K) and a record dimensionless thermoelectric figure of merit above 2 at 880 K.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to enhance the thermoelectric performance and thermal stability of Cu₂₋ₓS (copper - sulfur compound) through different dopants. Specifically, the researchers explored the effects of different elements (such as indium (In), zinc (Zn), lead (Pb), cadmium (Cd) and tin (Sn)) as dopants on the chemical composition, crystal phase and thermoelectric properties of Cu₂₋ₓS. Among them, special attention was paid to the effect of Pb doping, because Pb doping not only significantly improves the stability of the material at high temperatures, but also can adjust the carrier concentration, thereby greatly increasing the power factor. It was found that adding only 0.3% Pb can triple the power factor in the medium - temperature range (500 to 800 K), and achieve a dimensionless thermoelectric figure of merit (ZT value) of more than 2 at 880 K, which is an important breakthrough.

The key points in the paper include:
- **Improving thermal stability**: Pb doping significantly enhances the ability of Cu₂₋ₓS to resist sulfur volatilization and improves the thermal stability of the material.
- **Optimizing carrier concentration**: Pb doping allows the adjustment of carrier concentration, which is crucial for increasing the power factor.
- **Enhancing thermoelectric performance**: By optimizing the doping concentration, the researchers achieved a significant increase in the power factor in the medium - temperature range and reached a record ZT value.

These results are of great significance for the development of low - cost, high - performance thermoelectric materials, especially for applications in the medium - to - high - temperature range.