Abstract:Ultrathin catalytical silicon nanowires (SiNWs), grown as orderly arrays upon glass substrates, are ideal 1D channels for the construction of high-performance field effect transistors for low-power and high aperture/transparency electronics. In this work, a rather uniform growth integration of high-density ultrathin SiNWs has been accomplished directly on glass substrate at 290 degrees C, via an in-plane solid-liquid-solid mechanism. The indium (In) catalyst thickness deposited on the dense guiding terrace steps was identified as a key parameter to suppress the size dispersion of the In droplets, and thus enable a uniform growth of ultrathin SiNWs with diameters down to D-NW=21.8 +/- 1.8 nm, a close-to-unity guided growth rate and an excellent transparency > 90 % in spectrum ranging from 350 nm to 950 nm. Based on a convenient dry plasma etching and low-temperature passivation procedure, high-performance SiNW transistors have been successfully fabricated upon a dense array of parallel SiNWs as channels with a narrow NW-to-NW spacing of 100 nm. A high current ratio I-on/I-off > 10(7), a low off-state current down to 0.1 pA, a steep subthreshold swing of SS similar to 120 mV dec(-1) and excellent positive and negative bias stabilities have been demonstrated, as well as SiNW-based inverter logics that achieve a gain of 14.6 V/V under a drive voltage of 2.25 V. These results highlight the potential of catalytic SiNWs to serve as advantageous 1D channels for large-area display or transparent electronics.

Four-terminal polycrystalline-silicon vertical thin-film transistors on glass substrates

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate

Junctionless In-Plane-gate Transparent Thin-Film Transistors

Normally-off trench JFET technology in 4H silicon carbide

Fabrication and performance of indium oxide based transparent thin film transistors

High-density Integration of Uniform Sub-22 Nm Silicon Nanowires for Transparent Thin Film Transistors on Glass

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

Technology demonstration of a novel poly-Si nanowire thin film transistor

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate

Performance evaluation of polycrystalline Si1−xGex thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates

High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation