Abstract:The threshold voltage ( ${V}_{t}$ ) lowering induced by increasing Ti-silicidation anneal temperature is revealed for FinFET with TiAl based metal gate. It is demonstrated that increasing Ti-silicidation anneal temperature by 50 °C can result in significant reduction of ${V}_{t}$ for both n- and p-FinFET. The change of ${V}_{t}$ is found to be related to the deoxidation of Ti, the segregation of O, and the oxidation of Al in TiN/TiAl/TiN/TaN stack. A new effective work function (EWF) tuning model is then proposed, in which it suggests that the EWF is determined by two factors. One is the formation of metallic Ti or TiC in the middle part of the C-rich TiAl layer, and the other is the formation of metallic Ti in C-free TiN layer lying between TiAl and TaN. The formation of metallic Ti or TiC with a lower EWF than TiAl(O) or TiN will result in the reduction of ${V}_{t}$ . Since the formed metallic Ti in TiN layer lying between TiAl and TaN is much closer to HfO 2 layer than the formed metallic Ti or TiC in the middle part of TiAl, it can have more significant impact on ${V}_{t}$ tuning. However, it is revealed that as the TiN layer lying between TiAl and TaN becomes thicker, the diffusion of Al from TiAl into TiN will be suppressed. Correspondingly, the formation of metallic Ti in TiN layer is suppressed too due to the lack of Al atoms, which can extract O atoms from TiO x in TiN layer. Since the deoxidation, oxidation and diffusion progress are sensitive to process time, extending the soak anneal time of Ti-silicidation process is demonstrated to be an effective way to stabilize ${V}_{t}$ .

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