Abstract:This paper presents a comprehensive investigation on the role and manifestation of the FinFET effect in low voltage 4H-SiC MOSFETs as compared to their Si counterparts. For this purpose, a finite element model of a fabricated SiC FinFET with a fin width of 55 nm is constructed and calibrated to experimental data at a range of operating temperatures. The resulting TCAD model is then applied to examine the impact of the FinFET effect on the threshold voltage and the spatial variation of the carrier density and the drift mobility in the channel for a range of doping concentrations N A of the p-well. It is thereby shown that by reducing the fin width W fin from conventional values ≳ 500 nm down to an interval of optimal values ∼40 nm (keeping everything else constant), it is possible to enhance the channel mobility ∼2.5 times. This improvement is not only found to be much larger than the one predicted in Si (where it is ∼ 15% according to the TCAD model) but also arises at a larger fin width (for a given N A ). In this respect, it is demonstrated that this optimal range of fin widths can be moved to even larger, more practical values by reducing the doping of the p-well. As an alternative, the on-state performance of the gate-all-around FET is also examined in detail following a similar procedure. It is hence shown that this structure can display the FinFET effect at an even larger, nearly conventional W fin of ∼250 nm, whilst attaining a higher channel mobility and inversion layer density even than a stripe FinFET operated at the same overdrive. Thus, in light of all these advantages, the FinFET topology can play a key role in reducing the channel resistance of SiC power MOSFETs.

Influence of Capping Layer on Threshold Voltage for HKMG FinFET with Short Channel

Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG Nmosfets

Significant Threshold Voltage Lowering Induced by Contact Silicidation Annealing of FinFET

Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs with Very Thin Work Function Metal Layers

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

The Adjustment of Threshold Voltage on P-Type FinFET Devices

Si-capping thicknesses impacting compressive strained MOSFETs with temperature effect

Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate Pmosfets

Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate Finfets

A Comparative Study of TiN Thickness Scaling Impact on DC and AC NBTI Kinetics in Replacement Metal Gate Pmosfets

Comparative Study on NBTI Kinetics in Si P-Finfets with B2H6-based and SiH4-based Atomic Layer Deposition Tungsten (ALD W) Filling Metal

Significant Off-State Leakage Reduction for N-Finfet by Self-Adaptive TiN Etching

Investigation of Tialc by Atomic Layer Deposition As N Type Work Function Metal for Finfet

Threshold Voltage Instability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium Based Dielectrics

Nano-scale Si-capping Thicknesses Impacting Junction Performance on <110> Silicon Substrate

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Deterioration of junction performance with temperature effect for 45 nm Si-capping MOSFETs on <110> silicon substrate