Abstract:Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.

Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Impact of Postdeposition Annealing Ambient on the Mobility of Ge Nmosfets with 1-Nm EOT Al2O3/GeOx/Ge Gate-Stacks

Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Impact of Ald Gate Dielectrics (sio2, Hfo2, and Sio2/Hah) on Device Electrical Characteristics and Reliability of Algan/Gan Moshfet Devices

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure

Modulation of the effective work function of TiN metal gate for PMOS application

Simulation and analysis of high breakdown voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 gate dielectric