Etching Sr3Al2O6 sacrificial layer to prepare freestanding GBCO films with high critical current density

Zhongzhou Xie,Zhonghao Li,Hao Lu,Ying Wang,Yongsheng Liu
DOI: https://doi.org/10.1016/j.ceramint.2021.01.211
IF: 5.532
2021-05-01
Ceramics International
Abstract:We report a method for synthesizing freestanding GdBa2Cu3O7-x thin films with high current carrying capacity. On the LaAlO3 substrate, an epitaxial water-soluble sacrificial layer of Sr3Al2O6 was grown by RF magnetron sputtering, and then a GdBa2Cu3O7-x film was deposited on the sacrificial layer. By etching the water-soluble sacrificial layer, we obtained a freestanding GdBa2Cu3O7-x film. The surface of the freestanding film is smooth and dense and its critical current density reaches 0.65 MA/cm2 at a temperature of 30 K and a zero magnetic field. The successful preparation of this freestanding GdBa2Cu3O7-x film with high critical current density makes the application of superconducting films more extensive and flexible.
materials science, ceramics
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