Abstract:Phase pure and clean MgB2 films have been fabricated on different types of single-crystal substrate, including SiC, sapphire, MgO, LaAlO3, SrTiO3, and yttrium-stabilized ZrO2 (YSZ), via the hybrid physical-chemical vapor deposition (HPCVD) technique. Pure MgB2 films with different structural textures are obtained by selecting the substrate and its orientation, such as off-axis epitaxial MgB2 on MgO(211) or textured MgB2 on YSZ(110) substrates. Films show T-c(0) in the range 37-41 K, and residual resistivity rho(42 K) between 0.3 and 5 mu Omega cm as the substrate and film thickness are varied. The crystal structures and film morphologies are presented and discussed. Further investigations are focused on c-axis epitaxial films. Epitaxial MgB2 films with thickness about 300 nm manifest T-c(0) = 41.2 K and residual resistivity .(42 K) = 0.35 mu Omega cm on SiC(0001) while T-c(0) = 39.5 K and rho(42 K) = 0.27 mu Omega cm on c-cut sapphire, reflecting that the films are of high quality and in the 'clean limit'. Low upper critical field H-c2(parallel to ab)(0) and large anisotropy of the upper critical field gamma comparable to the results from MgB2 single crystals are also revealed. The smooth surface of the epitaxial films, with root-mean-square (RMS) roughness less than 5 nm, makes them well qualified for device applications. Microwave performance measurements are carried out using a coplanar resonator on a 300 nm thick film on sapphire substrate and no power dependence of unloaded quality factor in the output power range of -10-25 dB is found.

Ultrahigh Current-Carrying Capability in Clean MgB2 Films

Clean limit MgB_2 films with ultrahigh current carrying capability and carbon-doped MgB_2 films with extremely high upper critical field

Ultrathin Epitaxial Mgb2 Superconducting Films with High Critical Current Density and T-C above 33 K

Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

MgB2 Thick Films on Three-Dimensional Structures Fabricated by HPCVD

Significant Improvements of the High-Field Properties of Carbon-Doped MgB2 Films by Hot-Filament-assisted Hybrid Physical–chemical Vapor Deposition Using Methane As the Doping Source

Ultrathin MgB2films Fabricated on Al2O3substrate by Hybrid Physical–chemical Vapor Deposition with Hightcandjc

GROWTH AND PROPERTIES OF SUPERCONDUCTING MgB_2 THIN FILM FABRICATED ON Al_2O_3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION

High transport critical currents in dense, metal-clad superconductor wires of MgB2

Microstructure and high critical current of powder in tube MgB2

Hybrid Physical-Chemical Vapor Deposition of Ultrathin Mgb2 Films on Mgo Substrate with High T-C and J(C)

High transport critical current density obtained for Powder-In-Tube-processed MgB2 tapes and wires using stainless steel and Cu-Ni tubes

MgB2 thick film with TC = 40.2 K deposited on sapphire substrate

Enhancement of the Critical Current Density and the Irreversibility Field in Maleic Anhydride Doped MgB2 Based Tapes

Thick MgB2 film with (101) oriented micro-crystals

MgB2 Superconducting Films Fabricated on Copper Substrate by Hybrid Physical-Chemical Vapor Deposition

Effect of thickness on properties of MgB2 thin films

Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field

Superconducting Mgb2 Thin Films On Silicon Carbide Substrates By Hybrid Physical-Chemical Vapor Deposition

Thickness Dependence of Critical Current Density in Mgb2 Films Fabricated by Hybrid Physical-Chemical Vapor Deposition