Abstract:It has been recently recognized that MgB2 ultrathin films have good prospects in developing novel superconducting electronic devices.Investigating their superconducting properties has also important implications in exploring the phenomenon of multiband superconductivity in low-dimensions.On (0001) Al2 O3 substrates we have grown a series of MgB2 thin films with thicknesses d varying between 50 and 10 nm by employing the hybrid physical-chemical vapor deposition method and studied the thickness dependence of characteristic parameters of the films such as the superconducting transition temperature Tc,the residual resistivity ratio RRR,and the upper critical field Hc2 by measuring the temperature dependence of resistivity in zero and different applied magnetic fields.It has been observed that the Hc2 (T) exhibits a linear temperature dependence for all samples,clearly indicating the two-band superconductivity in MgB2 thin films.As d reduces,overall,the Tc and RRR of the films are shown to drop and the Hc2 (0) at 0 K rises.It has been further found that the Tc and Hc2 (0) of the films show in approximate a monotonic dependence on the RRR,with Tc decreasing and Hc2 (0) increasing as the RRR decreases,suggesting the RRR as an important factor in influencing the superconducting properties of the fabricated MgB2 ultrathin films.By analyzing the above phenomenon within the framework of two-band superconductivity,it is proposed that the interband scattering between electrons from σ band and π band in MgB2 may be intensified as the RRR of the films decreases.

Ultrathin Epitaxial Mgb2 Superconducting Films with High Critical Current Density and T-C above 33 K

Ultrathin MgB2films Fabricated on Al2O3substrate by Hybrid Physical–chemical Vapor Deposition with Hightcandjc

Hybrid Physical-Chemical Vapor Deposition of Ultrathin Mgb2 Films on Mgo Substrate with High T-C and J(C)

Thickness Dependence of Critical Current Density in Mgb2 Films Fabricated by Hybrid Physical-Chemical Vapor Deposition

GROWTH AND PROPERTIES OF SUPERCONDUCTING MgB_2 THIN FILM FABRICATED ON Al_2O_3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION

Suppression of Superconductivity in Epitaxial MgB2 Ultrathin Films

Effect of thickness on properties of MgB2 thin films

MgB2 Superconducting Films Fabricated on Copper Substrate by Hybrid Physical-Chemical Vapor Deposition

Ultrahigh Current-Carrying Capability in Clean MgB2 Films

MgB2 thick film with TC = 40.2 K deposited on sapphire substrate

MgB2 Thick Films on Three-Dimensional Structures Fabricated by HPCVD

MgB2 superconducting thin films with a transition temperature of 39 Kelvin

In Situ Epitaxial MgB2 Thin Films for Superconducting Electronics

Thickness Dependenceof Superconducting Properties of MgB2 THIN FILMS on Al2O3 Substrates

Clean limit MgB_2 films with ultrahigh current carrying capability and carbon-doped MgB_2 films with extremely high upper critical field

40.2 K CRITICAL TEMPERATURE OF MgB 2 THICK FILM DEPOSITED ON SUBSTRATE OF SAPPHIRE

Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

Superconducting Mgb2 Thin Films On Silicon Carbide Substrates By Hybrid Physical-Chemical Vapor Deposition

Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field

Properties of MgB2thick Film on Silicon Carbide Substrate