Clean limit MgB_2 films with ultrahigh current carrying capability and carbon-doped MgB_2 films with extremely high upper critical field

Chenggang Zhuang,Sheng Meng,Congyao Zhang,Xiaobai Ma,Ruijuan Nie,Furen Wang,Huan Yang,Ying Jia,Haihu Wen,Qingrong Feng
2008-01-01
Abstract:High quality epitaxial MgB2 film in clean limit with extremely high self-field critical current density JC(0),>108A/cm2,approaching the theoretical deparing current density of MgB2,in addition to very high critical transition temperature TC(0) ~ 41.4 K,low residual resistivity ρ(42K) down to 0.3 μΩcm and RMS roughness less than 5nm was reported in this article.Both I-V characteristics on a 150nm-wide nan-bridge and the magnetization measurement support this ultrahigh current density,indicating excellent current carrying capability in these clean films.Using a hot-filament assistant hybrid physical-chemical vapor depositon(HFA-HPCVD) technique with methane as doping source,carbon-doped MgB2 thin films with a significant enhancement in upper critical field HC2 and irreversibility field Hirr were fabricated.For the parallel field,a temperature derivative-dHC2//ab/dT value of 3 T/K near Tc was achieved in a heavily doped film.Carbon doping also enhanced flux pinning,resulting in much higher critical current density in magnetic field JC(H) than in undoped films.
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