Abstract:MgB2 ultrathin films have potential to make sensitive superconducting devices such as superconducting single-photon detectors working at relatively high temperatures. We have grown epitaxial MgB2 films in thicknesses ranging from about 40 nm to 6 nm by using the hybrid physical-chemical vapor deposition method and performed electrical transport measurements to study the thickness dependence of the superconducting critical temperature Tc. With reducing film thickness d, although a weak depression of the Tc has been observed, which could be attributed to an increase of disorder (interband impurity scattering) in the film, the Tc retains close to the bulk value of MgB2 (39 K), being about 35 K in the film of 6 nm thick. We show that this result, beneficial to the application of MgB2 ultrathin films and in accordance with recent theoretical calculations, is in contrast to previous findings in MgB2 films prepared by other methods such as co-evaporation and molecular-beam epitaxy, where a severe Tc suppression has been observed with Tc about one third of the bulk value in films of ∼5 nm thick. We discuss this apparent discrepancy in experiments and suggest that, towards the ultrathin limit, the different degrees of Tc suppression displayed in currently obtained MgB2 films by various techniques may arise from the different levels of disorder present in the film or different extents of proximity effect at the film surface or film-substrate interface.

MgB2 superconducting thin films with a transition temperature of 39 Kelvin

Superconducting MgB2 Thin Films with Tc ≈ 39 K Grown by Pulsed Laser Deposition

Ultrathin MgB2films Fabricated on Al2O3substrate by Hybrid Physical–chemical Vapor Deposition with Hightcandjc

Hybrid Physical-Chemical Vapor Deposition of Ultrathin Mgb2 Films on Mgo Substrate with High T-C and J(C)

GROWTH AND PROPERTIES OF SUPERCONDUCTING MgB_2 THIN FILM FABRICATED ON Al_2O_3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION

Ultrathin Epitaxial Mgb2 Superconducting Films with High Critical Current Density and T-C above 33 K

MgB2 thick film with TC = 40.2 K deposited on sapphire substrate

MgB2 Superconducting Films Fabricated on Copper Substrate by Hybrid Physical-Chemical Vapor Deposition

Growth and Superconductivity Characteristics of Mgb2 Thin Films

MgB2 superconductor thin films on Si and Al2O3 substrates

MgB 2 Thick Films Deposited on Stainless Steel Substrate with T C Higher Than 39 K

In Situ Epitaxial MgB2 Thin Films for Superconducting Electronics

Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy

Suppression of Superconductivity in Epitaxial MgB2 Ultrathin Films

40.2 K CRITICAL TEMPERATURE OF MgB 2 THICK FILM DEPOSITED ON SUBSTRATE OF SAPPHIRE

MgB<sub>2</sub> thick films deposited on stainless steel substrate with <i>T</i> <sub>c</sub> higher than 39 K

Progress in Depositing MgB2 Films on Stainless Steel Substrate

Effect of Thickness on Properties of MgB2 Thin Films

Electron Microscopy Studies of Epitaxial MgB2 Superconducting Thin Films Grown by in Situ Reactive Evaporation

Superconducting magnesium diboride films on Silicon with Tc0 about 24K grown via vacuum annealing from stoichiometric precursors