Abstract:It has been recently recognized that MgB2 ultrathin films have good prospects in developing novel superconducting electronic devices.Investigating their superconducting properties has also important implications in exploring the phenomenon of multiband superconductivity in low-dimensions.On (0001) Al2 O3 substrates we have grown a series of MgB2 thin films with thicknesses d varying between 50 and 10 nm by employing the hybrid physical-chemical vapor deposition method and studied the thickness dependence of characteristic parameters of the films such as the superconducting transition temperature Tc,the residual resistivity ratio RRR,and the upper critical field Hc2 by measuring the temperature dependence of resistivity in zero and different applied magnetic fields.It has been observed that the Hc2 (T) exhibits a linear temperature dependence for all samples,clearly indicating the two-band superconductivity in MgB2 thin films.As d reduces,overall,the Tc and RRR of the films are shown to drop and the Hc2 (0) at 0 K rises.It has been further found that the Tc and Hc2 (0) of the films show in approximate a monotonic dependence on the RRR,with Tc decreasing and Hc2 (0) increasing as the RRR decreases,suggesting the RRR as an important factor in influencing the superconducting properties of the fabricated MgB2 ultrathin films.By analyzing the above phenomenon within the framework of two-band superconductivity,it is proposed that the interband scattering between electrons from σ band and π band in MgB2 may be intensified as the RRR of the films decreases.

Electron Microscopy Studies of Epitaxial MgB2 Superconducting Thin Films Grown by in Situ Reactive Evaporation

Growth mechanism of superconducting MgB2 films prepared by various methods

Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy

Anisotropy of superconductivity of as-grown MgB$_2$ thin films by molecular beam epitaxy

Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties

Suppression of Superconductivity in Epitaxial MgB2 Ultrathin Films

Growth and Superconductivity Characteristics of Mgb2 Thin Films

Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

Thickness Dependenceof Superconducting Properties of MgB2 THIN FILMS on Al2O3 Substrates

In Situ Epitaxial MgB2 Thin Films for Superconducting Electronics

MgB2 superconductor thin films on Si and Al2O3 substrates

Superconducting Mgb2 Thin Films On Silicon Carbide Substrates By Hybrid Physical-Chemical Vapor Deposition

MgB2 superconducting thin films with a transition temperature of 39 Kelvin

Film Fabrication and Electronic Devices of MgB2 Superconductor

GROWTH AND PROPERTIES OF SUPERCONDUCTING MgB_2 THIN FILM FABRICATED ON Al_2O_3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION

Hybrid Physical-Chemical Vapor Deposition of Ultrathin Mgb2 Films on Mgo Substrate with High T-C and J(C)

Growth of high quality large area MgB2 thin films by reactive evaporation

Thick MgB2 film with (101) oriented micro-crystals

Superconducting MgB2 thin films by pulsed laser deposition

Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition