The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids
Yangyang Li,Huilong Zhu,Zhenzhen Kong,Yongkui Zhang,Xuezheng Ai,Guilei Wang,Qi Wang,Ziyi Liu,Shunshun Lu,Lu Xie,Weixing Huang,Yongbo Liu,Chen Li,Junjie Li,Hongxiao Lin,Jiale Su,Chuanbin Zeng,Henry H. Radamson
DOI: https://doi.org/10.3390/nano11051209
IF: 5.3
2021-05-03
Nanomaterials
Abstract:Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scale channels in vertical GAA CMOS and tunneling FETs has attracted more and more attention. In this work, the effect of doping on the digital etching of Si-selective SiGe with alternative nitric acids (HNO3) and buffered oxide etching (BOE) was investigated in detail. It was found that the HNO3 digital etching of SiGe was selective to n+-Si, p+-Si, and intrinsic Si. Extensive studies were performed. It turned out that the selectivity of SiGe/Si was dependent on the doped types of silicon and the HNO3 concentration. As a result, at 31.5% HNO3 concentration, the relative etched amount per cycle (REPC) and the etching selectivity of Si0.72Ge0.28 for n+-Si was identical to that for p+-Si. This is particularly important for applications of vertical GAA CMOS and tunneling FETs, which have to expose both the n+ and p+ sources/drains at the same time. In addition, the values of the REPC and selectivity were obtained. A controllable etching rate and atomically smooth surface could be achieved, which enhanced carrier mobility.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry