Effect of additives on the anisotropic etching of silicon by using a TMAH based solution

Ki-Hwa Jun,Bum-Joon Kim,Jung-Sik Kim

DOI: https://doi.org/10.1007/s13391-015-4499-x

IF: 3.151

2015-09-01

Electronic Materials Letters

Abstract:In this study, the anisotropic etching properties of single crystal silicon were examined using a tetramethyl ammonium hydroxide (TMAH). The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations were evaluated. The effects of different additives were also examined. As the THAM concentration (10–25 wt. %) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70°C and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. To solve these problems, four additives, pyrazine, ammonium persulfate (AP), ammonium hydrogen sulfate (AHS), and isopropyl alcohol (IPA), were added to the TMAH solution. The experimental results showed that these additives play an important role in increasing the etching rate up to 10–20%. The etched surface was also improved significantly by the decreased hillock density on the surface. The addition of IPA to the TMAH solution showed excellent results in improving the etched surface flatness and the undercutting compensation. On the other hand, one of the characteristics of IPA is the decrease in etching rate with increasing amount of IPA.

materials science, multidisciplinary

What problem does this paper attempt to address?

This paper aims to solve several key problems in the anisotropic etching of silicon using tetramethylammonium hydroxide (TMAH) solution, mainly including: 1. **Etching rate**: Although a low - concentration TMAH solution can achieve a relatively high etching rate, it will lead to an increase in surface roughness, form a large number of hillocks (hill - like structures), and produce a serious undercutting phenomenon at the corners. 2. **Surface roughness**: Although a high - concentration TMAH solution can optimize the etching surface conditions, the etching rate is significantly reduced, and there is a serious undercutting problem. 3. **Undercutting compensation**: In the wet anisotropic etching process, especially the undercutting phenomenon occurring at the convex corners of the pattern is a serious problem, which affects the precise manufacturing of micro - structures. To improve these problems, the author has studied the influence of different additives on the etching characteristics of TMAH solution. Specifically, the effects of the following additives are explored in the paper: - **Isopropyl alcohol (IPA)**: Adding IPA can significantly improve the flatness of the etching surface and undercutting compensation, but will reduce the etching rate. - **Pyrazine**: Adding pyrazine can effectively increase the etching rate and reduce the surface roughness, but may lead to poor undercutting compensation effects at certain concentrations. - **Ammonium persulfate (AP)**: Adding AP can significantly increase the etching rate and reduce the surface roughness, but may lead to more hillocks on the surface at high concentrations. - **Ammonium bisulfate (AHS)**: Adding AHS can increase the etching rate, reduce the surface roughness, and perform well in undercutting compensation. Through these studies, the author hopes to find the best combination of one or more additives to simultaneously optimize the etching rate, surface roughness and undercutting compensation, so as to achieve a higher - quality silicon film structure in micro - electro - mechanical systems (MEMS) and sensor manufacturing.

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