Abstract:The high-temperature mechanical and dielectric properties of Si2N2O ceramics are often limited by the introduction of a sintering aid. Herein, dense Si2N2O was prepared at 1700 °C by hot-pressing oxidized amorphous Si3N4 powder without sintering additives. A homogeneous network with short-range order and a SiN3O structure was formed in the oxidized amorphous Si3N4 powder during the hot-pressing process. Si2N2O crystals preferentially nucleated at positions within the SiN3O structure and grew into rod-like and plate-like grains. Fully dense ceramics with mainly crystalline Si2N2O and some residual amorphous phases were obtained. The as-prepared Si2N2O possessed a good flexural strength of 311 ± 14.9 MPa at 1400 °C, oxidation resistance at 1500 °C, and a low dielectric loss tangent of less than 5 × 10−3 at 1000 °C.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to prepare Si₂N₂O ceramics with enhanced high - temperature strength, antioxidant properties and dielectric properties through non - additive sintering methods. Specifically, the focus of the paper's research is on the following points: 1. **Avoid using sintering aids**: In the traditional Si₂N₂O ceramic preparation process, sintering aids (such as Li₂O, MgO, Al₂O₃ and Y₂O₃) are usually added to reduce the sintering temperature. However, these aids will introduce metal cations, resulting in a decrease in the flexural strength of the material at high temperatures, a weakening of the antioxidant properties and a significant increase in dielectric loss. Therefore, this paper proposes a method for preparing Si₂N₂O ceramics without using sintering aids. 2. **Improve high - temperature performance**: Sinter the oxidized amorphous Si₃N₄ powder by hot - pressing to form a SiN₃O network with a uniform short - range ordered structure. This structure promotes the preferential nucleation and growth of Si₂N₂O crystals, thereby obtaining a fully dense ceramic material whose main components are crystalline Si₂N₂O and a small amount of residual amorphous phase. 3. **Achieve excellent performance**: - At 1400 °C, the flexural strength reaches 311 ± 14.9 MPa. - It shows good antioxidant performance at 1500 °C. - At 1000 °C, the dielectric loss tangent is less than 5 × 10⁻³. ### Summary of the core issues of the paper: The paper aims to solve the problem of the decline in high - temperature performance of traditional Si₂N₂O ceramics caused by the use of sintering aids, and proposes a new method of sintering the oxidized amorphous Si₃N₄ powder by hot - pressing to obtain Si₂N₂O ceramics with enhanced high - temperature strength, antioxidant properties and low dielectric loss. Formula part: - Relationship between viscosity and temperature: \[ \eta=\eta_0\exp\left(\frac{Q}{kT}\right) \] where \(Q\) is the activation energy, \(\eta_0\) is the proportionality coefficient, and \(T\) is the temperature. - Relationship between diffusion coefficient and viscosity: \[ D_V = \frac{kT}{\delta\eta} \] where \(k\) is the Boltzmann constant, \(T\) is the temperature, \(\eta\) is the viscosity, and \(\delta\) is the characteristic dimension of the atomic size.

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