Abstract:Highly scalable nanosphere lithography‐assisted chemical etching method is developed to create light‐trapping nanostructures in InGaP/GaAs dual‐junction solar cells. The enhanced broadband absorption in the nanostructured device is ascribed to a combination of Fabry–Perot and guided‐wave resonances into which incident light is scattered by the Al2O3/Ag nanostructured rear mirror. This versatile technique facilitates enhanced performance in InGaP/GaAs dual‐junction solar cells. III–V‐based multijunction solar cells have become the leading power generation technology for space applications due to their high power conversion efficiency and reliable performance in extraterrestrial environments. Thinning down the absorber layers of multijunction solar cells can considerably reduce the production cost and improve their radiation hardness. Recent advances in ultrathin GaAs single‐junction solar cells suggest the development of light‐trapping nanostructures to increase light absorption in optically thin layers within III–V‐based multijunction solar cells. Herein, a novel and highly scalable nanosphere lithography‐assisted chemical etching method to fabricate light‐trapping nanostructures in InGaP/GaAs dual‐junction solar cells is studied. Numerical models show that integrating the nanostructured Al2O3/Ag rear mirror significantly enhances the broadband absorption within the GaAs bottom cell. Results demonstrate that the light‐trapping nanostructures effectively increase the short‐circuit current density in GaAs bottom cells from 14.04 to 15.06 mA cm−2. The simulated nanostructured InGaP/GaAs dual‐junction structure shows improved current matching between the GaAs bottom cell and the InGaP top cell, resulting in 1.12x higher power conversion efficiency. These findings highlight the potential of light‐trapping nanostructures to improve the performance of III‐V‐based multijunction photovoltaic systems, particularly for high‐efficiency applications in space.

Post-Growth Technology of Multi-Junction Photovoltaic Converters Based on A3B5 Heterostructures

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Plasmachemical Etching in Postgrowth Technology of Photovoltaic Converters

Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells

InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

A Gaas/Gainp Dual Junction Solar Cell Grown by Molecular Beam Epitaxy

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

A Broadband Light‐Trapping Nanostructure for InGaP/GaAs Dual‐Junction Solar Cells Using Nanosphere Lithography‐Assisted Chemical Etching

Growth Dynamics and Carrier Control of the Third Generation Semiconductor with Large Mismatch and Strong Polarization

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion