Plasmachemical Etching in Postgrowth Technology of Photovoltaic Converters

A. V. Malevskaya,Yu. M. Zadiranov,N. D. Il’inskaya,D. A. Malevskiy,P. V. Pokrovskiy
DOI: https://doi.org/10.1134/s1063784223900681
2024-03-13
Technical Physics
Abstract:Investigation of the heterostructure plasmachemical etching technology for fabricating multi-junction photovoltaic converters has been carried out. The dividing mesa-structure forming stage at different etching regimes and subsequent disturbed layer removing by liquid chemical treatment has been reviewed. The influence of mesa etching methods on cells photovoltaic characteristics has been investigated. Developed was the technology of photovoltaic converters fabrication with low current leakage values less than 10 –9 A at voltage less then 1V with high resistance to degradation.
physics, applied
What problem does this paper attempt to address?