Abstract:The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

Unexpectedly large energy variations from dopant interactions in ferroelectric HfO2 from high-throughput ab initio calculations

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO$_2$ from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Phase transitions in HfO2 probed by first-principles computations

Progress in computational understanding of ferroelectric mechanisms in HfO 2

The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO$_2$

Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Effect of Dopant Ordering on the Stability of Ferroelectric Hafnia

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Ferroelectric domain nucleation and switching pathways in hafnium oxide

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Defect design in ferroelectrics -- new insights on agglomeration

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films