Abstract:Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge(2)Sb(2)Te(5) (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

Drift of Schottky Barrier Height in Phase Change Materials

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Modeling Heterogeneous Melting in Phase Change Memory Devices

Materials For Phase-Change Memory With Elevated Temperature Stability

Pressure-induced Reversible Amorphization and an Amorphous–amorphous Transition in Ge 2 Sb 2 Te 5 Phase-Change Memory Material

Unveiling structural characteristics for ultralow resistance drift in BiSb- Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> materials for phase-change neuron synaptic devices

Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

Measurement of onset of structural relaxation in melt-quenched phase change materials

Electronic Properties of GST for Non-Volatile Memory

Temperature Dependence of Phase-Change Random Access Memory Cell

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory