Abstract:Phase‐change materials (PCMs) show a large property contrast that is exploited in memory storage. Fragile‐to‐strong transitions (FST) aid the application of PCMs, as ultrafast crystallization and amorphous phase stability are simultaneously realized. Here, for the PCM Ge3Sb6Te5 the viscosity is measured over sixteen orders of magnitude, clearly demonstrating an FST. Chalcogenide phase‐change materials combine a remarkable set of properties that makes them promising candidates for future non‐volatile memory applications. Binary data storage exploits the high contrast in electrical and optical properties between the covalent amorphous and metavalent crystalline phase. Here the authors perform an analysis of the liquid phase kinetics of the phase‐change material Ge3Sb6Te5, which is the key to ultrafast switching speeds. By employing four experimental techniques, the viscosity is measured over sixteen orders of magnitude despite its propensity for fast crystallization. These measurements reveal that the liquid undergoes a transition in viscosity–temperature dependence associated with a liquid–liquid phase transition. The system exhibits a shallow viscosity change with temperature near the glass transition which stabilizes the memory cells in the amorphous state and which limits the severity of relaxation processes. Meanwhile, when heated during the writing process, the fragility increases to more than double, causing the viscosity to drop rapidly enabling a nanosecond crystallization speed. This change in viscosity–temperature dependence is highly unusual among glass forming liquids and is reminiscent of the behavior of water. This viscosity transition is also key to the technological success of phase‐change materials for computer memory applications.

Measurement of onset of structural relaxation in melt-quenched phase change materials

Structural relaxation of amorphous phase change materials at room temperature

Unveiling the Structural Origin to Control Resistance Drift in Phase-Change Memory Materials

Drift of Schottky Barrier Height in Phase Change Materials

Phase-change Behaviors of Sb80Te20/SbSe Nanocomposite Multilayer Films

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Uncovering β-relaxations in amorphous phase-change materials.

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

Fragile‐to‐Strong Transition in Phase‐Change Material Ge3Sb6Te5

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Multi-level phase-change memory with ultralow power consumption and resistance drift

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice‐Like Phase‐Change Materials

Structure of Phase Change Materials for Data Storage

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Phase-change technologies: from PCRAM to probe-storage to processors

Picosecond Amorphization of Chalcogenides Material: from Scattering to Ionization

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Ultrahigh overall-performance phase-change memory by Yttrium dragging