Abstract:Phase-change materials are of great interest for low-power high-throughput storage devices in next-generation neuromorphic computing technologies. Their operation is based on the contrasting properties of their amorphous and crystalline phases, which can be switched on the nanosecond time scale. Among the archetypal phase change materials based on Ge-Sb-Te alloys, Sb2Te3 displays a fast and energy-efficient crystallization-amorphization cycle due to its growth-dominated crystallization and low melting point. This growth-dominated crystallization contrasts with the nucleation-dominated crystallization of Ge2Sb2Te5. Here, we show that the energy required for and the time associated with the amorphization process can be further reduced by using a photoexcitation-based nonthermal path. We employ nonadiabatic quantum molecular dynamics simulations to investigate the time evolution of Sb2Te3 with 2.6, 5.2, 7.5, 10.3, and 12.5% photoexcited valence electron-hole carriers. Results reveal that the degree of amorphization increases with excitation, saturating at 10.3% excitation. The rapid amorphization originates from an instantaneous charge transfer from Te-p orbitals to Sb-p orbitals upon photoexcitation. Subsequent evolution of the excited state, within the picosecond time scale, indicates an Sb-Te bonding to antibonding transition. Concurrently, Sb-Sb and Te-Te antibonding decreases, leading to formation of wrong bonds. For photoexcitation of 7.5% valence electrons or larger, the electronic changes destabilize the crystal structure, leading to large atomic diffusion and irreversible loss of long-range order. These results highlight an ultrafast energy-efficient amorphization pathway that could be used to enhance the performance of phase change material-based optoelectronic devices.

Picosecond Amorphization of Chalcogenides Material: from Scattering to Ionization

A Microscopic Explanation for Picosecond Amorphization of Chalcogenides Material

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Chalcogenide materials for optoelectronic memory and neuromorphic computing

Nonthermal Phase Transition In Phase Change Memory Cells Induced By Picosecond Electric Pulse

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Role of Microscopic Coherent Force and Hot-Carrier Cooling in Photoinduced Phase Transition for Chalcogenide Phase-Change Materials

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Measurement of onset of structural relaxation in melt-quenched phase change materials

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Insulator–metal Transition and Ultrafast Crystallization of Ga40Sb60/Sn15Sb85 Multiple Interfacial Nanocomposite Films

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Hot-carrier trap-limited transport in switching chalcogenides

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films