Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity

P. N. Rao,R. K. Gupta,K. Saravanan,A. Bose,S. C. Joshi,T. Ganguli,S. K. Rai,P.N.Rao,R.K.Gupta,S.C. Joshi,T.Ganguli,S.K.Rai
DOI: https://doi.org/10.48550/arXiv.1708.07378
2017-08-24
Materials Science
Abstract:Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-depth profile of the chemical elements constitute the films is reconstructed based on analysis of reflectivity curves measured in the vicinity of B K-edge. The composition of films is closely dependent on film thickness. Boron to Carbon (B/C) ratio reaches to ~4 as the thickness of deposited films increases. The B/C ratio estimated from RSXR measurements are in agreement with the RRBS measurements. TOF-SIMS data also suggested that decrease in boron content with decrease in film thickness. XPS measurements confirm the presence of little amount of B atoms on the surface of low thickness film.
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