Abstract:The two main polymorphs of boron nitride are hexagonal (h-BN) and cubic (c-BN) phases and both show attractive material properties to be employed under extreme environments. h-BN is also known as "white graphene" due to the matching hexagonal crystal symmetry and shows a layered structure which provides advantages as a lubricant material and as gate dielectrics for two-dimensional (2D) transistor channels. On the other hand, c-BN is analogous to another important elemental carbon material, diamond. While the mechanical strength of c-BN is lower than diamond, the thermal and chemical stability is even superior. Both h-BN and c-BN films are therefore strong candidates for applications under harsh ambient, including high-temperature, high-pressure, and corroding factors. BN films and coatings are conventionally grown using high-temperature CVD methods with typical substrate temperatures over 1000 o C. To reduce the deposition temperatures of this material while preserving the attractive crystal properties, alternative lower temperature physical and chemical vapor deposition strategies have been offered in the literature. Plasma-enhanced atomic layer deposition (PEALD) provides significant advantages over other methods such as precision thickness control, ultimate conformality, while reducing the growth temperature substantially. In our previous work, we had demonstrated the crystalline synthesis of h-BN films at substrate temperatures as low as 350 o C, while no growth was observed at lower substrate temperatures. In this work, we aim to demonstrate the feasibility of growing c-BN at substrate temperatures reaching 200 o C via a customized PEALD reactor featuring a large-diameter capacitively-coupled hollow-cathode plasma source with a relatively short source-to-substrate distance. We used Si(100), sapphire, and glass as the substrates to deposit the films. The growth temperature is kept between 150 and 250 °C, 10 sccm of N 2 flow is used as a carrier gas and Ar-purging gas flow was kept at 50 sccm. The triethylboron (TEB) precursor and various nitrogen plasma chemistries including different compositions of N 2 , H 2 , and Ar gases are utilized. The optimized growth condition is determined from in-situ monitored saturation studies, where the growth-per-cycle (GPC) parameter is noted for different precursor pulse time (15 and 30 ms), rf-plasma power (100 W to 250 W) and plasma-gas chemistries (N 2 -only, N 2 /H 2 , Ar/N 2 , Ar/N 2 /H 2 at varying ratios). While the 200 °C as-grown BN films exhibited nanocrystalline c-BN with relatively weak crystal peaks as verified by XRD measurements, vacuum annealing at 5 mTorr N 2 flow and 700 °C transformed the film structure into single-phase polycrystalline c-BN. The spectroscopic ellipsometer, x-ray reflectivity (XRR), and x-ray photoelectron spectroscopy (XPS) studies will be presented as well as the influence of post-deposition vacuum annealing to further improve the crystalline structure of c-BN films. Basic electrical properties of the grown BN films will be characterized using metal-insulator-semiconductor (MIS) diode temperature-dependent current-voltage (I-V) measurements. A specific effort will be devoted to enhance the as-grown film crystal properties via implementing novel atomic layer plasma annealing processes, which showed its potential for the ultrawide bandgap Ga 2 O 3 alloy. Another research question to be investigated is whether there is a possibility of tuning the material phase from cubic to hexagonal by carefully adjusting growth and in-situ Ar-plasma annealing conditions.

Vibrational spectroscopy of mixed hexagonal-cubic boron nitride thin films

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Resonant Raman scattering in cubic and hexagonal boron nitride

Optical and Acoustic Phonons in Turbostratic and Cubic Boron Nitride Thin Films on Diamond Substrates

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

BN Films Deposited by HFPECVD and the Mechanism of the Process

Understanding first order Raman spectra of boron carbides across the homogeneity range

Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Vibrational Imaging and Quantification of Two-Dimensional Hexagonal Boron Nitride with Stimulated Raman Scattering

Turbostratic Boron Carbonitride Films Produced by Bias-Assisted Hot Filament Chemical Vapor Deposition

Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition

Mechanical Properties and Bonding Structure of Boron Carbon Nitride Films Synthesized by Dual Ion Beam Sputtering

Electron Cyclotron Resonance Plasma-Assisted Pulsed Laser Deposition of Boron Carbon Nitride Films

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Composition and Structure of BCN Films Prepared by Ion Beam-Assisted Pulsed Laser Deposition

Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity

In Situ Infrared Spectroscopic Study of Cubic Boron Nitride Thin Film Delamination

Investigation on the Microstructure and Optical Properties of C-Axis Oriented Nanocrystalline Hexagonal Bn Films Fabricated by Hot-Filament Chemical Vapor Deposition

Low-Temperature Self-Limiting Growth of Cubic Boron Nitride Via Hollow-Cathode Plasma-Enhanced Atomic Layer Deposition