Abstract:UV absorption spectroscopy of artificial cubic boron nitride (cBN) single crystal flake, synthesized under high-temperature and high-pressure, was studied in the present paper. UV WINLAB spectrometer was used in the experiments, and MOLECULAR SPECTROSCOPY software was used for data analysis. The UV-cBN limit of 198 nm was showed in this test by a special fixture quartz sample. We calculated the energy gap by virtue of the formula: lambda0 = 1.24/E(g) (microm). The energy gap is 6. 26 eV. There are many viewpoints about the gap of cBN. By using the first-principles theory to calculate energy band structure and density of electronic states of cBN, an indirect transition due to electronics in valence band jumping into conduction band by absorbing photon can be confirmed. That leads to UV absorption. The method of calculation was based on the quantum mechanics of CASTEP in the commercial software package of Cerius2 in the Co. Accerlrys in the United States. The theory of CASTEP is based on local density approximation or gradient corrected LDA. The crystal parameter of cBN was input to the quantum mechanics of CASTEP in order to construct the crystal parameter model of cBN. We calculated the energy gap of cBN by the method of gradient corrected LDA. The method underestimates the value of nonconductor by about 1 to 2 eV. We gaot some opinions as follows: cBN is indirect band semiconductor. The energy gap is 4.76 eV, less than our experiment. The reason may be defect that we ignored in calculating process. It was reported that the results by first principles method of calculation of the band generally was less than the experimental results. This paper shows good UV characteristics of cBN because of the good agreement of experimental results with the cBN band width. That is a kind of development prospect of UV photo-electronic devices and high-temperature semiconductor devices.

In Situ Infrared Spectroscopic Study of Cubic Boron Nitride Thin Film Delamination

Residual Compressive Stress Induced Infrared-Absorption Frequency Shift of Hexagonal Boron Nitride in Cubic Boron Nitride Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Influence of the Compressive Stress on the Infrared Absorption of Sp2-Bonded Boron Nitride in Cubic Boron Nitride Thin Films

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

BN Films Deposited by HFPECVD and the Mechanism of the Process

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers

Prepared Low Stress Cubic Boron Nitride Film by Physical Vapor Deposition

Vibrational spectroscopy of mixed hexagonal-cubic boron nitride thin films

Optical and Acoustic Phonons in Turbostratic and Cubic Boron Nitride Thin Films on Diamond Substrates

Comparison and Combination of Several Stress Relief Methods for Cubic Boron Nitride Films Deposited by Ion Beam Assisted Deposition

Thermal Stability of Cubic Boron Nitride Films Deposited by Chemical Vapor Deposition

Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition

Characterization of interface of c-BN film deposited on silicon(100) substrate

[Study of cubic boron nitride crystal UV absorption spectroscopy]

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

Interfacial study of cubic boron nitride films deposited on diamond

A Study of Nano-Mechanical Properties and Nano-Scratch Behavior of Boron Carbonitride Films.

Investigation on the Microstructure and Optical Properties of C-Axis Oriented Nanocrystalline Hexagonal Bn Films Fabricated by Hot-Filament Chemical Vapor Deposition

PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION

Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN)