Micro-cracks generation and growth manipulation by all-laser processing for low kerf-loss and high surface quality SiC slicing

Liu Xiangfu,Hong Minghui

DOI: https://doi.org/10.1364/oe.540604

IF: 3.8

2024-10-10

Optics Express

Abstract:Liu Xiangfu, Hong Minghui Low kerf-loss and high surface quality silicon carbide (SiC) wafer slicing is key to reducing cost, improving productivity, and extending ... [Opt. Express 32, 38758-38767 (2024)]

optics

What problem does this paper attempt to address?

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Yuhang Li,Zhe Zhang,Qi Song,Haiyan Shi,Yu Hou,Song Yue,Ran Wang,Shunshuo Cai,Zichen Zhang

DOI: https://doi.org/10.1016/j.jmst.2023.09.046

2024-01-01

Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Hanwen Wang,Qiu Chen,Yongping Yao,Linlin Che,Baitao Zhang,Hongkun Nie,Rongkun Wang

DOI: https://doi.org/10.3390/cryst13010015

IF: 2.7

2022-12-23

Crystals

Abstract:The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful for solving these problems. In this work, the 4H-SiC samples with different surface roughness were processed by laser slicing. Findings revealed that good surface quality could reduce the damage to the wafer surface during laser slicing, reduce cleavage, and improve the flatness and uniformity of the modified layer. Thus, preprocessing on 4H-SiC can significantly improve the quality and efficiency of laser slicing.

materials science, multidisciplinary,crystallography
Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Shifei Han,Haijuan Yu,Chaojian He,Shusen Zhao,Chaoyu Ning,Lu Jiang,Xunchun Lin

DOI: https://doi.org/10.1016/j.optlastec.2022.108323

2022-10-01

Abstract:Silicon carbide has many advantages and a wide range of applications. The fabrication of a thin silicon carbide wafer using diamond wire cutting has become problematic because it resulted in chipping, delamination, and heating. In this work, it is proved that the 1064 nm picosecond laser creates a multiphoton-induced micro-explosion in 4H-SiC, which confined the microburst layer near the focus of the laser beam and made a cutting width of less than 2 μm. As a result, the 4H-SiC was decomposed into amorphous Si and C owing to the transient high temperature generated. Optimized processing parameters were investigated, such as the etching speed v and etching interval d at the optimized pulse energy of 30 μJ and a laser repetition frequency of 100 kHz. Eventually, two 4H-SiC wafers were successfully manufactured, which have an area of 1 cm × 1 cm and a thickness of 250 μm without residual stress on the sliced surface. The wafer minimum surface roughness was approximately 1.8 μm with a standard deviation of ≤ 0.12 μm. The structure and composition of 4H-SiC were investigated after laser slicing. This technology has critical applications for slicing hard and brittle material and thinning many semiconductors devices' backsides.

optics,physics, applied
Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Pei Chen,Shaowei Li,Rui Pan,Senyu Tu,Fei Qin

DOI: https://doi.org/10.1007/s10704-024-00801-7

IF: 2.635

2024-06-23

International Journal of Fracture

Abstract:The existing mechanical dicing process of single crystalline Silicon Carbide (SiC) is one of the main factors limiting the development of semiconductor process, which could be replaced by laser scribing potentially. To achieve efficient and low-damage SiC separation, the cracking behavior of SiC after laser grooving should be well understood and controllable. Since the laser grooving including thermal ablation and meltage solidification, the cracking behavior of the scribed SiC would be different to the original single crystal SiC. In this paper, cohesive zone model (CZM) is used to quantitively represent the cracking behavior of the nano-laser scribed SiC. The separation after scribing was conducted in a three-point bending (3 PB) fixture to characterize the cracking behavior. Therefore, by inverting the load–displacement curves of 3 PB with CZM embedded finite element model, the cohesive behavior is characterized by bilinear traction–separation law, which illustrated the whole cracking process numerically. The methodology established in current paper gives way to understand the SiC scribing and cracking process with quantitative cohesive parameters.

mechanics,materials science, multidisciplinary
Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Jiangyou Long,Qingfa Peng,Gaopan Chen,Yuliang Zhang,Xiaozhu Xie,Guoshun Pan,Xiaofeng Wang

DOI: https://doi.org/10.1016/j.ceramint.2021.05.027

IF: 5.532

2021-08-01

Ceramics International

Abstract:Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO2 nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO2 nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.

materials science, ceramics
One-step fabrication of fine surfaces via femtosecond laser on sliced SiC

Gaopan Chen,Jianguo Li,Haimei Luo,Yan Zhou,Qingfa Peng,Xiaozhu Xie,Guoshun Pan

DOI: https://doi.org/10.1016/j.mssp.2021.105926

IF: 4.1

2021-09-01

Materials Science in Semiconductor Processing

Abstract:A one-step, facile approach of femtosecond laser polishing for achieving fine surface in sliced SiC is reported. The effect of wavelength and pulse number on formation mechanism of surface morphology and composition are studied firstly. On the basis of relationship between removal depth and defect depth, variation on surface profile investigating, fine surface is obtained by fine-tuning processing parameters. Regular grooves formed by wire saw on subsurface is eliminated completely but no damage generates. Not only that, curves of indentation indicate that quality on subsurface is improved. The improvement both in surface and subsurface benefits from small thermal effect and high machining accuracy of femtosecond laser. Homogeneous structure/composition on subsurface after polishing has higher stable friction coefficient,which will be beneficial to the subsequent ultra-precision polishing.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Yuliang Zhang,Xiaozhu Xie,Yaoan Huang,Wei Hu,Jiangyou Long

DOI: https://doi.org/10.1016/j.ceramint.2022.10.043

IF: 5.532

2022-12-22

Ceramics International

Abstract:Silicon Carbide (SiC) is an important substrate material for electronic components due to its excellent properties. Compared with wire sawing technology, laser slicing technology is a promising method that can achieve the slicing of SiC wafers without kerf-loss. In this paper, the modified layer for SiC slicing was obtained by ultrafast laser processing inside semi-insulating SiC wafers. We studied the effect of pulse duration on the internal modification process and discussed the formation mechanism of the modified layer according to morphology and composition. The effect of laser processing parameters on the morphology of the modified layer was systematically studied as well as tensile tests were carried out on samples with different morphologies of the modified layer, which revealed the effect of the modified layer on the peeling. The results show that the increase in pulse duration favors the formation of internal modified structures, which are mainly composed of amorphous Si, amorphous C, amorphous SiC and SiC crystals. The change of process parameters will affect the type of structure and the formation of cracks in the modified layer. Only the sample with a single-crack layer was exfoliated successfully, proving that the crack morphology has an essential influence on the peeling.

materials science, ceramics
High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

Bing Dong,Zongwei Xu,Changkun Shi,Kun Zhang,Yuheng Zhang,Rushuai Hua,Wei Zhao,Jianshi Wang

DOI: https://doi.org/10.1016/j.optlastec.2023.109338

IF: 4.939

2023-08-01

Optics & Laser Technology

Abstract:High-intensity femtosecond laser processing of hard and brittle materials such as silicon carbide (SiC) has poor surface quality and is prone to micro-cracks, making it difficult to meet the application requirements of silicon carbide microdevices. In this study, a method for fabricating high-quality micro-nanostructures of 4H-SiC using vector polarized light was proposed. The influences of linear polarization and vector polarization on the quality and surface morphology of processed SiC microgrooves were studied, and the micromachined size rule of microgrooves machined under different pulse numbers was summarized. The damage distribution of microstructures machined by linearly polarized light and vector polarized light were characterized by confocal Raman mapping. The study had shown that using vector beam, especially azimuthal polarization beam, can ensure the uniformity of the processing area, effectively reduce micro-cracks and chipping in the processing of hard and brittle materials, and obtain better processing quality. In addition, the vector polarized light can avoid the large microgroove taper during the processing, and ensure good structure size. Finally, a high-quality multi-ring structure was fabricated by an azimuthal polarization beam, which provides an accurate method for preparing microstructures with excellent performance.

optics,physics, applied
Modeling and optimizing of laser-assisted waterjet process parameters for near-damage-free micromachining of monocrystalline silicon

Xuefei Liu,Chuanzhen Huang,Hanlian Liu,Dun Liu,Peng Yao,Bin Zou,Hongtao Zhu,Zhen Wang,Longhua Xu,Shuiquan Huang

DOI: https://doi.org/10.1177/09544054241245763

2024-04-25

Proceedings of the Institution of Mechanical Engineers Part B Journal of Engineering Manufacture

Abstract:Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, Ahead of Print. Monocrystalline silicon-based microstructure functional surfaces are widely used in the field of photoelectricity. However, the traditional process is prone to damage due to the hardness and brittleness of monocrystalline silicon. In this study, the depth, width, and depth-width ratio of the micro-V-groove on the surface of monocrystalline silicon were studied using laser-assisted waterjet technology. Firstly, the nanosecond laser pulse width was optimized to minimize processing damage. Then, the response surface method (RSM) was employed to optimize the V-groove's depth-width ratio and show the process parameters' interactive effects. The results show that the heated affected zone (HAZ) and lattice disorder at 10 ns are significantly smaller than those at other pulse widths, and there is almost no amorphous phase on the surface of V-grooves. Single process parameter usually has different effects on the size of the V-groove, and the process parameters have significant interactive effects, which are discussed in detail in the study. According to the prediction model, the highest depth-width ratio of a V-groove is 1.39. Near-damage-free V-groove with a high depth-width ratio helps to lower the reflectivity and increase the hydrophobicity of monocrystalline silicon.

engineering, mechanical, manufacturing
Multi-focal Picosecond laser vertical slicing of 6 inch 4H-SiC ingot

Jiabao Du,Shusen Zhao,Xiaoyu Lu,Lu Jiang,Shifei Han,Xinyao Li,Xuechun Lin

2024-11-27

Abstract:Ultrafast laser direct writing inside materials has garnered significant attention for its applications in techniques like two-photon polymerization, stealth dicing and vertical slicing. 4H-Silicon Carbide (4H-SiC) vertical slicing has wide potentials from research to industry due to low kerf loss and high slicing speed. In this paper, to improve the vertical slicing processing quality and lower the separation strength, we introduce a multi-focal vertical slicing method with spherical aberrations caused by refractive index eliminated. Additionally, by shaping the wavefront of picosecond laser, our experiments show the lower latitudinal ablation zone and higher crack propagation of multi-focal vertical slicing method on 4H-SiC, demonstrating that this method not only reduces filamentations to minimize ablation damage, but also significantly reduce the tensile strength during separation. We achieve a 6 inch 4H-SiC ingot vertical slicing and separation using 4-focal slicing. This method shows various potentials in laser processing.

Optics,Applied Physics
Experimental Study on the Influence of Ultraviolet Laser Parameters on the Microstructure Machining Quality of Silicon Carbide Ceramic

Tianchen Zhao,Jiahong Ruan,Hongyu Chen,Qianfa Deng,Kaiping Feng

DOI: https://doi.org/10.1149/2162-8777/acff80

IF: 2.2

2023-10-04

ECS Journal of Solid State Science and Technology

Abstract:Silicon carbide(SiC) ceramics have great application value in microelectronics and semiconductors due to their small dielectric constant, high thermal conductivity, and small thermal expansion coefficient. However, due to its high hardness and brittleness, defects such as stress concentration, microcracks, and excessively large heat-affected zone are prone to occur in traditional machining methods. In this paper, the ultra-thin SiC surface was micro-grooved by ultraviolet(UV) laser. The effects and rules of various machining parameters (scanning speed, repetition frequency, pulse width, defocus amount) in UV laser micro-grooves machining on the surface quality, machining depth, and cross-sectional morphology of SiC were studied. The experimental results showed that the surface roughness of SiC micro-grooves decrease with the increase of scanning speed; The relatively small surface roughness (Ra 0.72μm) could be obtained at a scanning speed of 500mm/s and a repetition frequency of 40kHz; Under low pulse width of 5ns, high repetition frequency of 50kHz, and high scanning speed of 500mm/s, micro-grooves with a relative error of 2.30% in removal depth could be obtained; The taper of the micro-groove section first decreases and then increases with the defocus from negative to positive, and reached the minimum value of 5° when the defocus positive 0.6mm.

materials science, multidisciplinary,physics, applied
Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals

Lei Han,Quanlong Wang,Chenglong Ma,Bangjie Gu,Xiao Li,Wentao Wei

DOI: https://doi.org/10.1016/j.jmgm.2024.108830

Abstract:In this study, to enhance the cutting efficiency and precision of the chip while minimizing waste from cutting damage, molecular dynamics simulation is used to investigate the formation mechanism of defects and cracks of silicon carbide crystals during the laser stealth dicing. The results showed that the high thermal stress generated by the laser scanning induced the production and expansion of cracks. Thus, the crack propagates in the direction of [100], and subsequently forms branches in the directions of [101] and [101‾]. It also can be found that the silicon carbide crystals produced dislocation slip, and the dislocation lines moved along the slip surface, which impeded the crack extension in the directions of [101‾] and [1‾01‾]. In addition, atomic phase transformation and loss is occurred under the high-temperature environment of the laser heating process. Cubic diamond crystal structure atoms are partially transformed into amorphous structure, while a small portion transformed into hexagonal diamond structure. The crystal structural arranged orderliness temporarily increased and then rapidly decreased due to prefabrication defects, and new unknown crystal structures are produced.
One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Yanan Liu,Ye Ding,Jichang Xie,Liangliang Xu,In Wha Jeong,Lijun Yang

DOI: https://doi.org/10.1016/j.matdes.2022.111443

2022-12-04

Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

materials science, multidisciplinary
Fabrication of 4H–SiC microvias using a femtosecond laser assisted by a protective layer

Bin Liu,Panpan Fan,Hongwei Song,Kai Liao,Wenjun Wang

DOI: https://doi.org/10.1016/j.optmat.2021.111695

IF: 3.754

2022-01-01

Optical Materials

Abstract:SiC is the core material of the third generation of semiconductors, and the fabrication of SiC microvias is of great significance for the integrated packaging of the new generation of microelectromechanical systems. However, due to its hard nature and brittle properties, cracking and shedding of the surface can easily occur when SiC is processed directly using femtosecond lasers. In this study, the protective-layer-assisted femtosecond laser drilling method was adopted to overcome the above issues during the drilling process. The influence of the type and thickness of the protective layer material on the quality of the microvias was studied. The results show that selecting an adequate protective layer material and a suitable thickness can improve the entrance morphology. On the other hand, the exit morphology remains poor, and a recast layer and ablative debris are present on the inner wall, which need to be removed via ultrasonic cleaning and chemical corrosion. Therefore, based on our previous work on water-assisted laser drilling, a protective layer and water were simultaneously used to assist the drilling process. In this manner, high-quality microvias with no cracks at the entrance and exit and smooth inner walls were obtained. At the same time, a group of hole arrays were processed, and their consistency in size and roundness was verified. The findings of this study will be of great importance for the development of SiC-based electronic devices as well as for high-quality micromachining of other hard and brittle materials.

materials science, multidisciplinary,optics
Microstructure evolution and ablation mechanism of SiCf/SiC ceramic matrix composite microgrooves processed by pico-second laser

Cheng Zhang,Han Li,Jie Chen,Qinglong An,Ming Chen

DOI: https://doi.org/10.1016/j.ceramint.2023.09.060

IF: 5.532

2023-09-01

Ceramics International

Abstract:SiCf/SiC ceramic matrix composites have been widely applied in turbine engine aerospace components with high temperature resistance, high strength, and lightweight performances. Due to the high brittleness and anisotropy, laser-assisted machining acts as a feasible process to improve the machinability of the SiCf/SiC composites. A single-factor experiment was designed to understand the microstructure evolution and ablation behaviors of the microgrooves processed by pico-second laser in this study. The high pulse energy/scanning time and low scanning speed had positive impacts on the depth and width, but negative effect on the three-dimensional surface roughness Sa. Besides, the optimal parameter was 200 kHz repetition frequency. In addition, the microstructure evolution and ablation mechanism under different laser parameters were investigated by the HRSEM, EDS, and XRD analysis. These experimental results showed that the machined microgrooves were covered by a large amount flocculent composed of amorphous SiO2 when the oxidation was weak, and the splashes with the form of amorphous SiO2 and crystal SiO2 under strong ablation conditions. This indicated that the plasma effect transformed to the photothermal effect with enough heat. Meanwhile, a condensate layer occurred in all experiments and a recrystallized SiC layer relied on the microgroove depth controlled by adjusting laser parameters. This work will provide a theoretical basis and practice guidance for laser-assisted machining of the SiCf/SiC composites.

materials science, ceramics
Simulation and experimental study on limited cutting and heat effect of silicon carbide

Bing Liu,Haijie Yang,Ruijie Kong,Xinyu Wang,Jiaqi Liu,Kuo Pang

DOI: https://doi.org/10.1016/j.mtcomm.2022.104378

IF: 3.8

2022-09-14

Materials Today Communications

Abstract:As a typical third-generation semiconductor material, silicon carbide (SiC) presents outstanding properties in terms of the bandgap width, disruptive voltage strength, thermal conductivity and so on. However, there are still technical difficulties in acquiring the nondestructive surface with an optical quality, which seriously constrained the application and development of SiC functional devices. Therefore, in this paper, the material removal mechanism of SiC was firstly investigated according to the MD simulation results. Then, nanocutting experiments were conducted under the vacuum environment of the scanning electron microscope, where the transient behavior of material removal could be observed online with a high resolution, so that the simulation results can be effectively verified. From the simulated and experimental results, it was found that under the research range of parameters, the limited removal thickness (LRT) of SiC decreased with an increase in cutting speed, while the cutting depth had little effect on the LRT. Besides, the polycrystalline SiC presented a smaller LRT compared with the monocrystalline SiC. Therefore, it was advantageous to enhance the machined surface quality and improve the surface integrity with regard to polycrystalline SiC. The cutting temperature increased with an increase in cutting speed during the nanocutting, and a higher cutting speed can prolong the time for the workpiece temperature to stabilize. The findings of this study are able to provide a theoretical basis for the improvement of ultraprecision machining technology especially for hard–brittle and hard-to-process materials.

materials science, multidisciplinary
Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Wenhao Geng,Qinqin Shao,Yan Pei,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1002/admi.202300200

IF: 5.4

2023-07-01

Advanced Materials Interfaces

Abstract:The slicing of 4H silicon carbide (4H‐SiC) wafers is realized by combining femtosecond laser irradiation and bandgap‐selective photo‐electrochemical (PEC) exfoliation. Femtosecond‐laser irradiation leads to the formation of a damage layer consisting of amorphous silicon and amorphous carbon. The bandgap‐selective PEC etching is then used to corrode of the damage layer and realize the slicing of 4H‐SiC wafers. High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics. In this study, the high‐yield slicing of 4H‐SiC wafers is realized by combining femtosecond laser irradiation and bandgap‐selective photo‐electrochemical (PEC) exfoliation. By combining light‐absorption measurements, micro‐Raman, and micro‐photoluminescence characterizations, it is found that the damage layer formed inside 4H‐SiC after femtosecond‐laser irradiation consists of amorphous silicon and amorphous carbon. This indicates that the femtosecond‐laser irradiation leads to phase separation in 4H‐SiC. The bandgap of the damage layer is 0.4 eV. Taking advantage of the different bandgap energies of the damage layer and the perfect 4H‐SiC region, the damage layer is removed from the perfect region of 4H‐SiC by using bandgap‐selective PEC etching. During the PEC etching, light‐generated holes can selectively oxidize and corrode the damaged layer with the assistance of the HF solution, and leave the upper and lower perfect 4H‐SiC layers being intact. The current work contributes to the development of the high‐yield and high‐throughput femtosecond laser slicing of 4H‐SiC wafers.

materials science, multidisciplinary,chemistry
Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography

Yang Liu,Ji Huang,Yunxia Ye,Misheng Liang,Zijie Dai,Jingjing Zhang,Xuejiao Wang,Yufeng Tao,Changji Pan

DOI: https://doi.org/10.1063/5.0195375

IF: 4

2024-04-01

Applied Physics Letters

Abstract:Micro-structured silicon surface plays a significant role in the electronics industry. Crystalline and amorphous phases of silicon, which have significantly different physical properties, can be transformed into each other using femtosecond laser, and assisted chemical etching enables the easy fabrication of various micro-structures. However, efficient and controllable fabrication of micro-cylinders, micro-rings, and micro-ring grooves on silicon surfaces still remains a challenge. Here, we propose a temporally modulated single-shot femtosecond pulse lithography technology, combining laser-induced silicon modification and chemical etching. In this technology, the occurrence of recrystallization allows for the flexible manipulation of the shape of the modified area, transitioning from circular to annular shapes by adjusting the laser fluence. This corresponds to the formation of micro-cylinders and micro-rings after etching. In the case of temporally shaped pulses, with an increasing pulse delay, the micro-rings formed after etching gradually transform into micro-ring grooves, as the recrystallization area created by the first sub-pulse is reacted by the second sub-pulse. Due to the characteristics of the single shot, the technology, when combined with the flying punch method, can be used for the high-efficiency fabrication of large-area silicon surface micro-structure arrays.

physics, applied
CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

Lu Jiang,Shusen Zhao,Shifei Han,Han Liang,Jiabao Du,Haijuan Yu,Xuechun Lin

DOI: https://doi.org/10.1016/j.optlastec.2024.110700

IF: 4.939

2024-07-01

Optics & Laser Technology

Abstract:Silicon carbide (SiC), the third-generation semiconductor material, is important in developing electronic power devices. Compared to wire sawing technology, Laser splitting SiC is an efficient way to produce SiC wafers with reduced material loss. In this work, we propose a new method of continuous wave (CW) laser-assisted splitting of SiC wafer based on modified layer by picosecond laser. For the process of CW laser irradiation on the modified layer, thermal–mechanical numerical simulations were performed to calculate the temperature and stress fields during laser loading. The mechanism of CW laser-assisted SiC wafer splitting was analyzed to guide the selection of CW laser parameters. The microstructure, element distribution, and stress state of the split SiC wafer surface were investigated and analyzed. The results showed that laser processing did not affect the crystal structure and carrier concentration of SiC. Compressive stress was generated on the splitting surface. Polycrystalline carbon and single crystalline silicon appeared on the splitting surface with a 50-250 nm thickness. The layer with compressive stress and polycrystalline microstructures can be removed after grinding and polishing.

optics,physics, applied
Evolution of micro/nano-structural arrays on crystalline silicon carbide by femtosecond laser ablation

Ru Zhang,Chuanzhen Huang,Jun Wang,Shaochuan Feng,Hongtao Zhu

DOI: https://doi.org/10.1016/j.mssp.2020.105299

IF: 4.1

2021-01-01

Materials Science in Semiconductor Processing

Abstract:An experimental study is conducted to investigate the multi-length scale evolution from micro/nano-structural arrays to V-grooves by femtosecond laser-irradiations, considering the effects of laser polarization and the number of scans on the periodic features and the micro/nano-structures. It is found that the evolution from micro/nano-structural arrays to V-grooves is gradual as the laser fluence, scan speed or the number of scans is increased. Laser-induced surface instability, hatching effects, Coulomb explosions, melting, and evaporation are found to be the underlying mechanisms for the micro/nano structural formation. As the laser fluence increases, the agglomerated nanoparticles change from sparse to dense, so that the boundary between the LIPSS (laser-induced periodic surface structures) becomes less obvious. The oxygen (O) elements attached to the surface of nanoparticles increase with an increase in laser fluence. A high-spatial-frequency LIPSS (HSFL) can transform to low-spatial-frequency LIPSS (LSFL) as the laser fluence excesses the ablation threshold, while the spatial period of the HSFL and LSFL is independent of fluence. It is shown that the irradiated surface evolves from a near-damage-free zone to one with a recast layer and thermal-induced micro-cracks, defined as heat-affected zones (HAZ). Near thermal damage-free micro/nano-structural arrays with different orientations on the sidewalls of the grooves are fabricated at close to the laser ablation threshold by multi-pass scanning. A self-organizing model is developed which shows that laser polarization leads to the asymmetry of energy distribution and the structural array is arranged along the main direction of energy flow. The model analysis shows a good agreement with experimental results and provides an efficient means to understand the interaction between femtosecond laser and silicon carbide (SiC).

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

Micro-cracks generation and growth manipulation by all-laser processing for low kerf-loss and high surface quality SiC slicing

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

One-step fabrication of fine surfaces via femtosecond laser on sliced SiC

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

Modeling and optimizing of laser-assisted waterjet process parameters for near-damage-free micromachining of monocrystalline silicon

Multi-focal Picosecond laser vertical slicing of 6 inch 4H-SiC ingot

Experimental Study on the Influence of Ultraviolet Laser Parameters on the Microstructure Machining Quality of Silicon Carbide Ceramic

Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Fabrication of 4H–SiC microvias using a femtosecond laser assisted by a protective layer

Microstructure evolution and ablation mechanism of SiCf/SiC ceramic matrix composite microgrooves processed by pico-second laser

Simulation and experimental study on limited cutting and heat effect of silicon carbide

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography

CW laser-assisted splitting of SiC wafer based on modified layer by picosecond laser

Evolution of micro/nano-structural arrays on crystalline silicon carbide by femtosecond laser ablation