Investigations on ion irradiation induced strain and structural modifications in 3C–SiC
N. Sreelakshmi,Pooja Gupta,Mukul Gupta,V.R. Reddy,S.K. Rai,C. David,S. Amirthapandian
DOI: https://doi.org/10.1016/j.mssp.2024.108170
IF: 4.1
2024-01-28
Materials Science in Semiconductor Processing
Abstract:Ion irradiation induced recovery of defects in 3C–SiC caused by electronic energy loss ( S e ) in the intermediate energy regime (a few 100s of keV to a few 10s of MeV) is less explored. Towards this, separate and sequential ion irradiation of 200 keV Si + ions and 14 MeV Si + ions in 3C–SiC were carried out. In our earlier work, RBS/C findings demonstrated that 14 MeV Si + ion irradiation ( S e - 4.9 keV/nm) resulted in defect recovery in 3C–SiC pre-damaged with 200 keV Si + ions [1]. The present work investigates the strain and structural evolution using High-resolution X-ray diffraction (HRXRD), Reciprocal space mapping (RSM), X-ray absorption near edge spectroscopy (XANES) and Diffuse reflectance spectroscopy (DRS), in the 3C–SiC layer as a result of ion irradiation induced defect production and recovery. HRXRD results revealed that 200 keV Si + ion results in 4 % of strain at the projected range of ions and strain relaxation as a result of ionization-induced annealing is observed after subsequent 14 MeV Si + ion irradiation. RSM measurements showed evidence for the formation of extended defects in sequentially ion irradiated samples. Optical characterization using DRS measurements indicates a reduction of refractive index in the ion-irradiated layer, however, for the amorphous SiC layer (ion dose: 0.6 dpa, 200 keV Si + ion), the refractive index increased due to a reduction in mass density. Modification of refractive index in the ion irradiated layer is a result of the combination of negative change in volume effect and positive change in electronic polarizability.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied