Humidity‐Dependent Characteristics of Few‐Layer MoS 2 Field Effect Transistors

Hui Yang,Sa Cai,Dongping Wu,Xiaosheng Fang
DOI: https://doi.org/10.1002/aelm.202000659
IF: 6.2
2020-10-04
Advanced Electronic Materials
Abstract:<p>2D semiconductors, such as molybdenum disulfide (MoS<sub>2</sub>), are emerging materials for field effect transistor (FET) channels in the field of nano‐electronics. These atomically thin 2D films are particularly sensitive to moisture due to their large specific surface area, making them promising candidates for humidity sensing applications. Studies on MoS<sub>2</sub> FET humidity sensor have indicated that there are two key factors contributing to the performance of such devices: the number of MoS<sub>2</sub> layer and the gate bias. However, no existing work has revealed the exact relation between humidity and electrical properties for few‐layer MoS<sub>2</sub> FETs. Here, the effect of humidity on the electrical transport properties for back‐gated tri‐ and six‐layer MoS<sub>2</sub> FETs is explored. The on‐state current of the tri‐layer MoS<sub>2</sub> FET is heavily dependent on the relative humidity while that of the six‐layer MoS<sub>2</sub> FET remains nearly unchanged when relative humidity varies. Moreover, a linear relationship between the hysteresis and relative humidity is found in both tri‐layer and six‐layer MoS<sub>2</sub> FETs. These results advance the understanding of the dependence of electronic properties on relative humidity for few‐layer MoS<sub>2</sub> FET.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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