Humidity/Oxygen‐ Insensitive Organic Synaptic Transistors Based on Optical Radical Effect
Dapeng Liu,Junyao Zhang,Qianqian Shi,Tongrui Sun,Yutong Xu,Li Li,Li Tian,Lize Xiong,Jianhua Zhang,Jia Huang
DOI: https://doi.org/10.1002/adma.202305370
IF: 29.4
2023-07-30
Advanced Materials
Abstract:For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions would lead to significantly different device performance. Some devices even lost the synaptic responses under the vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen level can be a challenge. Herein, we report a moisture‐ and oxygen‐insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules. Unlike the widely reported charge trapping effect, we utilize the photo‐induced free radical to realize the photo‐synaptic performance. The resulting synaptic transistor displays typical excitatory post‐synaptic current, paired‐pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photo‐synaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast‐enhanced capability of the device has been successfully validated by the single‐layer‐perceptron/double‐layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next‐generation environment‐stable organic synaptic devices and systems. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology