Abstract:Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials have gained extensive attention due to their high sensitivity, label-free detection capability, and fast response. Molybdenum disulfide (MoS 2 ), with tunable bandgap, high surface-to-volume ratio, and smooth surface without dangling bonds, is a promising material for FET biosensors. Previous reports have demonstrated the fabrication of MoS 2 -FET biosensors and their high sensitivity detection of proteins. However, most prior research has focused on the realization of MoS 2 -FETs for detecting different kinds of proteins or molecules, while comprehensive analysis of the sensing mechanism and dominant device factors of MoS 2 -FETs in response to proteins is yet to investigate. In this study, we first fabricated MoS 2 -FET biosensor and detected different types of proteins (immunoglobulin G (IgG), β-actin, and prostate-specific antigen (PSA)). Secondly, we built the model of the device and analyzed the sensing mechanism of MoS 2 -FETs in response to proteins. Experimental and modeling results showed that the induced doping effect and gating effect caused by the target protein binding to the device surface were the major influential factors. Specifically, the channel doping concentration and gate voltage (V g ) offset exhibited monotonic change as the concentration of the protein solution increases. For example, the channel doping concentration increased up to ~37.9% and the Vg offset was ~ -1.3 V with 10−7 μg/μL IgG. The change was less affected by the device size. We also investigated the effects of proteins with opposite acid-base properties (β-actin and PSA) to IgG on the device sensing mechanism. β-actin and PSA exhibited behavior opposite to that of IgG. Additionally, we studied the response behavior of MoS 2 -FETs with different dimensions and dielectric materials (channel length, MoS 2 thickness, dielectric layer thickness, dielectric layer material) to proteins. The underlying mechanisms were discussed in details. This study provides valuable guidelines for the design and application of MoS 2 -FET biosensors.

Probing Electron Mobility of Monolayer MoS2 Field‐Effect Transistors in Aqueous Environments

Ionic-Strength Dependence of Electron Mobility of Back-Gate Bilayer MoS2 FETs in Aqueous Electrolyte Solutions

Influence of Water Vapor on the Electronic Property of MoS2 Field Effect Transistors

Humidity‐Dependent Characteristics of Few‐Layer MoS2 Field Effect Transistors

Layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors

Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements

Humidity‐Dependent Characteristics of Few‐Layer MoS 2 Field Effect Transistors

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

High-Stability Ph Sensing With A Few-Layer Mos2 Field-Effect Transistor

Electrolyte under Molybdenum Disulfide Surfaces: Molecular Insights on Structure and Dynamics of Water

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Investigating on sensing mechanism of MoS 2 -FET biosensors in response to proteins

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors