High-Stability Ph Sensing With A Few-Layer Mos2 Field-Effect Transistor

Honglei Wang,Peng Zhao,Xuan Zeng,Chadwin D. Young,Walter Hu
DOI: https://doi.org/10.1088/1361-6528/ab277b
IF: 3.5
2019-01-01
Nanotechnology
Abstract:Recently, molybdenum disulfide (MoS2), an emerging 2D material, has become an alternative candidate for ultra-sensitive biosensors due to its semiconducting behavior and the unique layer-by-layer atomic structure. Here, we report on highly stable and repeatable real-time pH sensing with few-layer MoS2 field-effect transistor (FET) biosensors, fabricated with both HfO2 and Al2O3/HfO2 gate dielectrics on top of MoS2 flakes exfoliated from natural crystals onto SiO2/Si samples. Both types of sensors demonstrate a highly linear, stable and repeatable response over a wide pH range with near-ideal pH sensitivity close to the theoretical limit of 59.6 mV pH(-1). Ascribing from a different device operation regime in the pH sensing test-subthreshold regime for a sensor with an Al2O3/HfO2 dielectric and linear regime for a sensor with HfO2-a sensor with Al2O3/HfO2 shows significantly higher current sensitivity (similar to 105-fold) and relatively better linearity than a sensor with HfO2, while the latter shows relatively higher stability and higher repeatability. An Al2O3/HfO2-coated MoS2 FET reveals a high sensitivity or low detection limit of 0.01 pH.
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