Hafnium oxide layer-enhanced single-walled carbon nanotube field-effect transistor-based sensing platform

QingYi Meng,Shuhua Wei,Zhiyuan Xu,Qiang Cao,Yushi Xiao,Na Liu,Huan Liu,Gang Han,Jing Zhang,Jiang Yan,Alexander P Palov,Lidong Wu,Alexander P. Palov
DOI: https://doi.org/10.1016/j.aca.2020.12.040
IF: 6.911
2021-02-01
Analytica Chimica Acta
Abstract:<p>Single-walled carbon nanotube-based field effect transistors (SWCNT-FETs) are ideal candidates for fabricating sensors and have been widely used for chemical sensing applications. SWCNT-FETs have low selectivity because of the environmentally sensitive electronic properties of SWCNTs, and SWCNT-FETs also show a high noise signal and poor sensitivity because of charge trapping from Si-OH hydration of the SiO<sub>2</sub>/Si substrate on the SWCNTs. Herein, poly (4-vinylpyridine) (P4VP) was used for noncovalent attachment to SWCNTs and selective binding to copper ions (Cu<sup>2+</sup>). Importantly, the introduction of a hafnium-oxide (HfO<sub>2</sub>) layer through atomic layer deposition (ALD) overcame the charge trapping by SiO<sub>2</sub> hydration and remarkably decreased the interference signal. The sensitivity of the P4VP/SWCNT/HfO<sub>2</sub>-FET sensor for Cu<sup>2+</sup> was 7.9 μA μM<sup>-1</sup>, which was approximately 100 times higher than that of the P4VP/SWCNT/SiO<sub>2</sub>-FET sensor, and its limit of detection (LOD) was as low as 33 pmol L<sup>-1</sup>. Thus, the P4VP/SWCNT/HfO<sub>2</sub>-FET sensor is a promising candidate for the development of Cu<sup>2+</sup>-selective sensors and can be designed for the large-scale manufacturing of custom-made sensors in the future.</p>
chemistry, analytical
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