Design and Modeling of the Electrostatically Controlled Nanowire FET for Ppt-level Hydrogen Sensing

Zoe Mutsafi,Klimentiy Shimanovich,Anwesha Mukherjee,Yossi Rosenwaks
DOI: https://doi.org/10.1088/1361-6463/acffd7
2023-10-06
Journal of Physics D Applied Physics
Abstract:We present the design of a H 2 gas sensor based on a Palladium (Pd) decorated Silicon-on-Insulator (SOI) nanowire FET with a standard SOI CMOS fabrication process, where a top Pd layer plays a dual role of a catalyst and a surrounding metal gate. A numerical study was conducted based on a simplified steady-state model to describe the sensing mechanism of H 2 in dry air at 300 K. The simulation is based on the model of dissociative H 2 adsorption on the Pd surface and the formation of a dipole layer at the Pd/SiO 2 interface. The H atoms induced dipoles lead to a potential drop which exponentially increases the FET drain current and consequently, the sensor response. The FET drain current is controlled by its back-gate bias and by varying the H 2 concentrations; it is shown that the drain current response reaches 1.8 × 10 8 % for 0.8 % H 2 in air and a superior sensitivity of 4.58 × 10 4 %/ppm in the sub-threshold operation regime. The sensor exhibits an outstanding theoretical detection limit of 50 ppt (response of 1 %) and an upper dynamic range limit of 7000 ppm which allow for timely and accurate detection of H 2 gas presence. The power consumption ranges between ~10 fW (dry air) to ~20 nW (0.8 % H 2 in dry air) and therefore paves the way for a very large-scale integration commercial sensing platform.
physics, applied
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