Abstract:In this work, for the first time, a detailed comparative performance analysis of nanoscale catalytic metal gate (CMG) Nanosheet (NS) Field Effect Transistor (FET) and Tunnel Field Effect Transistor (TFET) is undertaken for H2 gas sensing application emphasizing the sensing performance optimization. In this context, the essential physics of the transduction mechanism is comprehensively analyzed from the device electrostatics and carrier transport mechanism, and a detailed design‐level understanding is developed for individual sensors. The physical insight developed through the comparative study is then extended to systematically optimize CMG‐NSTFET performance using bandgap engineering and dual‐dielectric design. Finally, the performance of the proposed sensors is extensively benchmarked against the reported CMG‐nanowire (NW) FETs, CMG‐FinFETs, and CMG‐TFETs. In this work, for the first time, the catalytic metal gate (CMG) based nanosheet Field Effect Transistor (NSFET) and nanosheet Tunnel Field Effect Transistor (NSTFET) are proposed for nano‐scale device dimensions, and the different design aspects of catalytic metal gate (CMG)‐based transduction for Hydrogen (H2) sensing are extensively investigated using numerical device simulation. The influence of applied biasing conditions and structural parameter specifications on the sensing performance of CMG‐NSFET and CMG‐NSTFET are methodically analyzed from device electrostatics and carrier transport mechanisms. Furthermore, the relative maximum sensitivity variations with H2‐partial pressure, ambient temperature, and the presence of ambient Oxygen are comprehensively studied. The study reveals that compared to CMG‐NSFET, the CMG‐NSTFET demonstrates a high immunity against bias and doping variations, with a notably higher (> 50%) sensitivity within low H2 partial pressures (10−15 – 10−10 Torr). Next, the sensing performance of CMG‐NSTFET is systematically optimized through a band‐gap and gate‐stack engineering approach, leading to a 180% to 650% sensitivity improvement from lower (10−15 Torr) to higher (10−5 Torr) range of H2 partial pressure. Finally, the performance of optimized CMG‐NSFET and CMG‐NSTFET are extensively benchmarked against other reported nanostructured CMG‐FET and TFET‐based H2 gas sensors, exhibiting a notably higher sensitivity in the proposed sensors.

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