Abstract:This study explores ultrathin all solid‐state electrolyte‐gated synaptic transistors (EGSTs) with chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) channel and initiated chemical vapor deposition (iCVD) grown organic–inorganic hybrid electrolyte. The fabricated MoS2‐based EGST achieves outstanding synaptics properties, benefitting from sub‐30 nm ultrathin electrolyte and atomically thin channel. The approach provides a guide for EGSTs to overcome scaling challenge. Electrolyte‐gated synaptic transistors (EGSTs) have attracted considerable attention as synaptic devices owing to their adjustable conductance, low power consumption, and multi‐state storage capabilities. To demonstrate high‐density EGST arrays, 2D materials are recommended owing to their excellent electrical properties and ultrathin profile. However, widespread implementation of 2D‐based EGSTs has challenges in achieving large‐area channel growth and finding compatible nanoscale solid electrolytes. This study demonstrates large‐scale process‐compatible, all‐solid‐state EGSTs utilizing molybdenum disulfide (MoS2) channels grown through chemical vapor deposition (CVD) and sub‐30 nm organic‐inorganic hybrid electrolyte polymers synthesized via initiated chemical vapor deposition (iCVD). The iCVD technique enables precise modulation of the hydroxyl group density in the hybrid matrix, allowing the modulation of proton conduction, resulting in adjustable synaptic performance. By leveraging the tunable iCVD‐based hybrid electrolyte, the fabricated EGSTs achieve remarkable attributes: a wide on/off ratio of 109, state retention exceeding 103, and linear conductance updates. Additionally, the device exhibits endurance surpassing 5 × 104 cycles, while maintaining a low energy consumption of 200 fJ/spike. To evaluate the practicality of these EGSTs, a subset of devices is employed in system‐level simulations of MNIST handwritten digit recognition, yielding a recognition rate of 93.2%.

Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Organic Field-Effect Transistors: Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity (adv. Mater. 12/2015)

Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Atmospheric Degradation and Performance Recovery of Two‐dimensional MoS2 Field Effect Transistor

Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

Probing Electron Mobility of Monolayer MoS2 Field‐Effect Transistors in Aqueous Environments

Tweaking the Performance of Dielectric Modulated Junctionless Double Gate Metal Oxide Field Effect Transistor-Based Label-Free Biosensor

Atmospheric Degradation and Performance Recovery of <scp>Two‐Dimensional MoS<sub>2</sub></scp> Field Effect Transistor<sup>†</sup>

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Laser Annealing Towards High-Performance Monolayer MoS2 and WSe2 Field Effect Transistors.

Passivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Crested two-dimensional transistors

Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics

Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces