Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Hongliang Chen,Shaohua Dong,Meilin Bai,Nongyi Cheng,Hao Wang,Mingliang Li,Huiwen Du,Shuxin Hu,Yanlian Yang,Tieying Yang,Fan Zhang,Lin Gu,Sheng Meng,Shimin Hou,Xuefeng Guo
DOI: https://doi.org/10.1002/adma.201405378
IF: 29.4
2015-01-01
Advanced Materials
Abstract:Low-voltage, low-cost, high-performance monolayer field-effect transistors are demonstrated, which comprise a densely packed, long-range ordered monolayer spin-coated from core-cladding liquid-crystalline pentathiophenes and a solution-processed high-k HfO2 -based nanoscale gate dielectric. These monolayer field-effect transistors are light-sensitive and are able to function as reporters to convert analyte binding events into electrical signals with ultrahigh sensitivity (≈10 ppb).
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