Solution Processed Steep Subthreshold OFETs for Low-power and High Sensitivity Bio-chemical Sensing

Jiaqing Zhao,Qiaofeng Li,Wei Tang,Xiaojun Guo
DOI: https://doi.org/10.23919/AM-FPD.2018.8437381
2018-01-01
Abstract:Low voltage field effect transistors (OFETs) are achieved by reducing the sub-gap density of states (DOS) at the channel instead of enlarging the gate dielectric capacitance. Further work realizes both large gate dielectric capacitance via low-k/high-k bilayer gate dielectric and significantly reduced sub-gate DOS at the channel in one device structure for steep subthreshold swing OFETs with all solution/printing processes. The use of such steep subthreshold swing OFETs for high sensitivity, low power ion sensing is presented.
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