Sensing with Extended Gate Negative Capacitance Ferroelectric Field-Effect Transistors

Honglei Xue,Yue Peng,Qiushi Jing,Jiuren Zhou,Genquan Han,Wangyang Fu

DOI: https://doi.org/10.1016/j.chip.2023.100074

2023-01-01

Chip

Abstract:With major signal analysis elements situated away from the measuring environment, extended gate (EG) ion-sensitive field effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. This work presents the formulation of a highly sensitive and power-efficient ISFET based on a metal-ferroelectric-insulator gate stack with negative capacitance (NC)-induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected extended gate electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.