Abstract:Analytical model of dielectric modulated trench dual gate junction less field effect transistor (DM_TDJLFET) for biosensing applications is used for the label free detection of bio molecules. The structure of DM-TDGJLFET has two gates which are placed vertical in separated trenches. Threshold voltage sensitivity of neutral as well as charged biomolecules are being studied by this model. Analytical modeling of dual gate and nanowire junction less is used for theoretical analysis off junction less ion sensitive field effect transistor. This FET is used to get the output of nanowire and planar dual gate JLISFET with respect to pH for all regions of operations. This topology successfully brings about designated retention time with larger physical barrier thickness and wider barrier offset length caused by the reduction in band to band tunneling and recombination performance of GaAs and GaSb dual gate junction less metal oxide semiconductor FET is used for the study of high performance switching applications GaAs gallium arsenide is a III-V direct bandgap semiconductor with a zinc blende crystal structure devices. It results a higher leakage power description in both channel materials and low intrinsic delay for thicker layers caused by a substitution amount of energy drop for the predictive analytic model of negative capacitance affect in long channel dual gate junction less transistor. It is based on charge model. The negative capacitance minimizes short channel effects and improves current driving capability, enables both low power operation and more effective transistor size scaling. The sensitivity analysis of negative capacitance junction less transistor is developed in the view of variation in device parameters and the performance with conventional JL devices with TCAD-based investigation of dual gate junction less transistor is used for visualizing the sensitivity of the device against light intensity.

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

Sensing with Extended Gate Negative Capacitance Ferroelectric Field-Effect Transistors

Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis

WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications

Negative Capacitance Field Effect Transistor with Modified Gate Stack and Drain-sided cavity for Label-free Biosensing

Negative capacitance split source tunnel FET as dielectric modulated highly sensitive biosensor

High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors

A novel inverted T-shaped negative capacitance TFET for label-free biosensing application

Fabrication of High-Performance Dual-Gate ISFET Ph Sensors Using In2O3 Nano-Channel

Carbon Nanotube Field-Effect Transistor Based Ph Sensors

Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor

Nernst limit in dual-gated Si-nanowire FET sensors.

High sensitivity In-Ga-Zn-O nanofiber-based double gate field effect transistors for chemical sensing

A Dual Gate Junctionless FinFET for Biosensing Applications

Performance and Sensitivity Analysis of Polarity Controllable-Ion Sensitive FET for pH Sensing Applications

Numerical assessment of dielectrically-modulated short- double-gate PNPN TFET-based label-free biosensor

Improved Sensitivity and Stability for SnO Ion-Sensitive Field-Effect Transistor-Based Ph Sensor by Electrical Double Layer Gate and AlO Sensitive Film

WSe2 Negative Capacitance Field-Effect Transistor for Glucose Sensing

Sensitivity and Reliability Assessment of Pocket Doped NCFET Based Dielectrically Modulated Biosensor Considering Steric Hindrance Effects

Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements

Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm