Impact of Gate Structure on the Electrophysiology Detection Behaviors for SOI Ion-Sensitive FETs

Xinyi Zhang,Rui Su,Chenrui Zhu,Xianglong Chen,Junkang Li,Rui Zhang

DOI: https://doi.org/10.1109/icicdt63592.2024.10717685

2024-01-01

Abstract:The ion-sensitive field effect transistors (ISFETs) with direct ionic solution gate (DG) and an extended gate (EG) are fabricated for electrophysiology detection. Back-gate modulation is employed to adjust the operation point of ISFETs, thereby achieving enhanced sensitivity during operation. It has been determined that the charging mechanisms of the electric double layer (EDL) between ion liquids and solids are a key determinant of sensitivity. In this case, ensuring direct contact between the ionic liquid and the oxide film, rather than using an extended gate, is crucial for fabricating high-performance ISFETs.