Abstract:The development of organic–inorganic hybrid thin films structures to enhance detection efficiency has garnered significant attention. This outstanding performance can primarily be attributed to the advantages of long carrier lifetime and diffusion length, high light absorption coefficients, and low exciton binding energy. To better passivate the surface defects of the film layer and optimize the electron–hole layer, this paper proposes an effective method for enhancing the responsivity of sandwich metal-semiconductor-metal (MSM) type inorganic/organic photodetectors with a SiO 2 /ZnO/P3HT:PC 61 BM/Pt nanoparticles (NPs) structure. By modifying the Pt NPs deposited directly onto the sample to induce localized surface plasmon resonance (LSPR), the external quantum efficiency (EQE) of the photodetector (PD) is significantly improved across a broad wavelength range from 300 to 680 nm. The maximum responsivity of 0.51 A/W and photocurrent of 0.042 A occur at a wavelength of 375 nm in the SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs device. The response rise time of the SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs sample is 1.2 s, which is more than 5 times shorter than that of devices without Pt NPs treatment. At the same time, the dark current is reduced. The as-fabricated SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs sample was characterized using XRD, XPS, EDS, TEM, SEM, and AFM. These measurements demonstrate that the tunneling hole injection is enhanced by intensified energy level bending, induced by both trapped electrons in these aggregations and accumulated ones, as investigated through Poynting's theorem.

Ultrasensitive Water-Processed Monolayer Photodetectors

Ultrasensitive Photodetectors Based on Strongly Interacted Layered-Perovskite Nanowires

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

Hybrid WSe 2 -In 2 O 3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

Design and Construction of Ultra-Thin Mose2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection

A high-performance photodetector based on small-bundled single-wall carbon nanotube film/silicon heterojunctions

Schottky-Contacted WSe 2 Hot-Electron Photodetectors with Fast Response and High Sensitivity

Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Si-CMOS-compatible 2D PtSe2-based Self-Driven Photodetector with Ultrahigh Responsivity and Specific Detectivity

Silicon Waveguide-Integrated Carbon Nanotube Photodetector with Low Dark Current and 48 GHz Bandwidth.

WS2 lateral p–n homojunction toward a sensitive self-driven photodetector by water treatment

Interfacial Engineering of High-Performance, Solution-Processed Sb 2 S 3 Phototransistors

High‐Performance Quasi‐2D Perovskite/Single‐Walled Carbon Nanotube Phototransistors for Low‐Cost and Sensitive Broadband Photodetection

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van Der Waals Heterojunction

Ultraviolet–visible photodetectors based on surface plasmon-polymer coupled inorganic/organic thin film heterojunction

2D MoS2/CuPc heterojunction based highly sensitive photodetectors through ultrafast charge transfer

Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode

Highly Sensitive Cuins2/Zns Core-Shell Quantum Dot Photodetectors