A Route to MoO 2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

Ara Yoon,Hae Lin Yang,Sanghoon Lee,Seunghwan Lee,Beomseok Kim,Changhwa Jung,Hanjin Lim,Jin-Seong Park
DOI: https://doi.org/10.1016/j.ceramint.2024.01.300
IF: 5.532
2024-03-10
Ceramics International
Abstract:Among the various molybdenum oxide (MoO x ) films, molybdenum dioxide (MoO 2 ) has gained significant attention as a promising electrode material for metal-insulator capacitors owing to its exceptional crystalline properties and high work function (WF). However, achieving precise atomic layer deposition of MoO 2 films requires careful selection of molybdenum (Mo) precursors and oxidants, given the metastable nature of MoO 2 . Furthermore, film properties can vary depending on the oxidation potential of the reactant. In this study, we successfully deposited MoO 2 films by utilizing Mo (NMe 2 ) 4 as the Mo source, which reacted with an O source (oxygen gas or ozone). MoO x (O 2 ) and MoO x (O 3 ) films exhibited significantly different growth rates, measuring approximately 0.23 and 1.36 Å/cycle, respectively. Additionally, MoO x (O 2 ) and MoO x (O 3 ) exhibited high WFs of 4.81 and 5.12 eV, respectively. Finally, hydrogen (H 2 ) annealing induced a monoclinic phase in MoO 2. By contrast, MoO x (O 3 ) exhibited an orthorhombic structure after both H 2 and O 2 annealing, suggesting that the crystal structure was independent of the annealing atmosphere. These findings highlight the possibility that when a MoO 2 layer that is well crystallized through H 2 treatment is applied as an electrode for dynamic random-access memory(DRAM) capacitors, high-k crystal-inducing effects can be functionalized, and the leakage current can be reduced through the Schottky emission barrier.
materials science, ceramics
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