Abstract:Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, the atomic layer deposition (ALD) of rutile-phase TiO2 on nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow such insulating films at high temperatures to ensure low defect concentrations and high crystallinity. However, with increasing growth temperature, it is also crucial to consider the aggravated effect of interface reactions that could potentially hinder final device performance. Here, we report the high-temperature ALD growth of TiO2 on RuO2 substrates using the heteroleptic precursor trimethoxy(pentamethylcyclopentadienyl)titanium ((CpMe5)Ti(OMe)3) and O3. High-quality, rutile-phase TiO2 films with large dielectric constants of ∼100 could be grown at temperatures exceeding 300 °C. When the growth temperature reaches 330 °C, we find that an anomalous RuO2 reduction reaction occurs due to interactions between the substrate and Ti precursor. The reduced Ru is transformed into volatile RuO4 during the subsequent O3 injection steps, resulting in partial etching of the substrate. Simple RuO2/TiO2/RuO2 capacitor devices fabricated from optimized films demonstrate excellent dielectric performance with an equivalent oxide thickness (EOT) of 0.5 nm at leakage current densities of less than 10–7 A/cm2. A further reduction of EOT to 0.4 nm could be achieved by implementing a single cycle of Al doping to the TiO2 films, surpassing the benchmark values proposed for next-generation DRAM capacitors by a safe margin. Our findings clearly showcase the benefits of high-temperature ALD in the semiconductor technology, as well as providing guidelines for the interpretation of the convoluted interface reactions tied to its implementation.

Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN x Electrodes via TiN Passivation for DRAM Cell Capacitor Applications

Stabilized Octahedral Frameworks in Layered Double Hydroxides by Solid‐Solution Mixing of Transition Metals

A Route to MoO 2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

Atomic layer deposition of molybdenum oxide using (N Bu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

SrTiO3 and (Ba,Sr)TiO3 Films Epitaxially Grown on SrRuO3 Using Atomic Layer Deposition

Low temperature crystallization of atomic-layer-deposited SrTiO 3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

Properties of Composite Electrode of Tantalum Oxide and Molybdenum Nitride

5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO2 Dielectrics

Laminated indium-oxide/molybdenum-oxide nanocomposites for high-work-function electrodes in organic photovoltaics and capacitor devices

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Improved Electrical Performance of Ultra-thin BexMg1-xO Films Using Super-cycle Atomic Layer Deposition

High-Temperature Stable Amorphous Sn-Rich InSnGaO Thin Films Fabricated Via Atomic Layer Deposition for Next-Generation Dynamic Random-Access Memory Applications

Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films