Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN x Electrodes via TiN Passivation for DRAM Cell Capacitor Applications

Wangu Kang,Ji Sang Ahn,Jae Hyeon Lee,Byung Joon Choi,Jeong Hwan Han
DOI: https://doi.org/10.1021/acsami.4c14077
IF: 9.5
2024-10-16
ACS Applied Materials & Interfaces
Abstract:The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoN(x)) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV)...
materials science, multidisciplinary,nanoscience & nanotechnology
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