Abstract:The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO 2 nanorods self-embedded into the nanoporous Al 2 O 3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95–480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm −2 , the loss tangent of 4·10 −3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm −2 , the breakdown field strength of up to 10 MV·cm −1 , the energy density of 100 J·cm −3 , the quadratic voltage coefficient of capacitance of 4 ppm·V −2 , and the temperature coefficient of capacitance of 480 ppm·K −1 at 293–423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices. GRAPHICAL

Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors

5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN x Electrodes via TiN Passivation for DRAM Cell Capacitor Applications

MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen-Incorporated HfO2/ZrO2/HfO2

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

CMOS-Compatible Low-T Processing Methods for HZO-based DRAM Capacitors by E-field Cycling

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO2/TiN Capacitors

Atomic‐Scale Study of Dead Layers in Epitaxial Perovskite Dielectric Thin Films with Oxide and Metal Top Electrodes

Interface Optimization of Passivated Er 2 O 3 /Al 2 O 3 /InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al 2 O 3 Interlayers

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology