Abstract:Despite SrTiO 3 (STO) possessing a high dielectric constant, its application as a capacitor dielectric in dynamic random-access memory(DRAM) capacitors faces challenges due to the high-temperature annealing for crystallization, its compositional inhomogeneity, and the high leakage currents of STO films. To address these issues, we employ atomic layer deposition(ALD) of STO films onto Pt substrates at elevated temperatures(340–380 °C). The use of low-reactivity Pt electrodes effectively mitigates the initial growth of excess Sr, ensuring enhanced compositional uniformity along the film growth direction. Coupled with ALD at high temperatures, this approach facilitates the crystallization of STO films in the as-grown state, further enhancing the crystallinity with increasing film thickness. Subsequent low-temperature post-deposition annealing (PDA) at 400 and 500 °C achieves full crystallization. This process results in a remarkable increase in the dielectric constant, reaching approximately 150. Furthermore, the absence of microcracks after PDA, attributed to the formation of adequately dense films, contributes to substantially improved dielectric properties. Consequently, these STO films exhibit an exceptionally low equivalent oxide thickness of 0.34 nm coupled with an ultralow leakage current of 3.7 × 10 −8 A/cm 2 at an operation voltage of 0.8 V, promising for advancing DRAM capacitors. This study presents a pathway for the sustainable scaling of DRAMs, addressing challenges in ALD-grown STO films.

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5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor

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Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode

CMOS-Compatible Low-T Processing Methods for HZO-based DRAM Capacitors by E-field Cycling

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Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

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Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

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A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

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Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Low temperature crystallization of atomic-layer-deposited SrTiO 3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-doped Oxide Layers