Abstract:Two-dimensional (2-D) layered transition metal dichalcogenides, such as MoS2, WSe2, WS2 and MoSe2 have received a lot of attention recently due to their significant thermal, mechanical, electrical and optical properties. Molybdenum Disulfide (MoS2), one of the transition metal dichalcogenides of interest for 2-D electronic systems, exhibits not only good thermal stability and high melting point, but also excellent light absorption, fast photo-response and sizeable band gap properties. Therefore, these unique properties make MoS2 a promising material for various electronic devices, photodetectors, sensors and catalysis applications. Many techniques have been developed for the synthesis of MoS2 films on different substrates in recent years, such as pulsed laser deposition (PLD), chemical vapor deposition (CVD). However, very little is known about atomic layer deposition (ALD) synthesis of MoS2 films there are very only few references. ALD technique exhibits self-limiting atomic layer reactions in each introduced ALD cycle. It can accurately control film layer thickness stoichiometry, composition, uniformity, and sharp interface. Furthermore, ALD also can be used to deposit conformal film onto very complex structures. Here we report on a large-area synthesis of MoS2 films on native oxide covered and hydroxyl terminated Si substrates by using the Savannah 100 ALD system from Ultratech/Cambridge Nanotech. Molybdenum hexacarbonyl (Mo(CO)6) and dimethyldisulfide (CH3SSCH3, DMDS) are employed as the chemical ALD precursors for Molybdenum and Sulfur, respectively. Generally 20 sccm N2 was used as a carrier gas for the precursors. The growth temperature was set at 200, 230 and 250 oC. The crystal structure and chemical composition of WSe2 films were identified by using X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). The film morphology was characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The optical properties of ALD MoS2 films were analyzed by Raman spectroscopy and femtosecond transient absorption spectroscopy.

Plasma Enhanced Atomic Layer Deposition of Molybdenum Oxide from Mo(CO)6 and O2 Plasma for 2D Electronic Device Application

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Constructing Conductive MoOx Thin Films by Plasma Enhanced Atomic Layer Deposition

Ion bombardment effect on properties of MoO thin film under different PEALD plasma exposure time

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition

A Mechanism for the Growth of a Plasma Electrolytic Oxide Coating on Al

Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

(Invited) Overview of ALD Synthesized MoS2 Thin Films

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Studying the Atomic Layer Deposition of Molybdenum Oxide and Titanium–Molybdenum Oxide Films Using Quartz Crystal Microbalance

Atomic layer deposition of molybdenum oxide using (N Bu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Surface and Interfacial Study of Atomic Layer Deposited Al2O3 on MoTe2 and WTe2

Growth of nanostructured molybdenum disulfide (MoS2) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

Wafer‐Scale Demonstration of Polycrystalline MoS2 Growth on 200 mm Glass and SiO2/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition