Abstract:In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO2Cl2 precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H2 was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required.

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure

Plasma Enhanced Atomic Layer Deposition of Molybdenum Oxide from Mo(CO)6 and O2 Plasma for 2D Electronic Device Application

Precise Layer Control of MoTe2 by Ozone Treatment.

Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Exploration of New Self-limiting Atomic Layer Etching Methods for Molybdenum

Constructing Conductive MoOx Thin Films by Plasma Enhanced Atomic Layer Deposition

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature

Kinetic control for planar oxidation of MoS$_2$

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Layer-by-Layer Thinning of MoS2 by Plasma

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Conductive single-phase SrMoO3 epitaxial films synthesized in pure Ar ambience via plasma-assisted radio frequency sputtering

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.