Abstract:Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.

Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure

Precise Layer Control of MoTe2 by Ozone Treatment.

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Anomalous Oxidation and Its Effect on Electrical Transport Originating from Surface Chemical Instability in Large-Area, Few-Layer 1T '-Mote2 Films

Kinetic control for planar oxidation of MoS$_2$

Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Regulation of Te oxide layer on a CdZnTe film for adjusting surface contact of a CdZnTe-based device

Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Hexagonal metal oxide monolayers derived from the metal–gas interface

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Hydrothermal controlled growth of MoTe2/MoO3−x materials: Synthesis mechanism, light-matter interaction and its photoelectrochemical activity

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation