Thinner 2D α-MoO 3 makes setting up memristors easier

Yukun Hong,Shangui Lan,Baojun Pan,Zhixiang Zhang,Bingbing Chen,Lijie Zhang,Peijian Wang
DOI: https://doi.org/10.1016/j.jmat.2024.01.012
IF: 8.589
2024-02-16
Journal of Materiomics
Abstract:Highlights • A facile chemical vapor deposition for standing ultrathin MoO 3 nanosheets assisted by substrate pretreatment is developed. • Thickness of MoO 3 nanosheets decreases dramatically, compared with counterparts by growth without this approach. • Memristors based on the thickness-reduced 2D MoO 3 show significantly lower set voltage and other superior properties. • This facile method assisted by surface charges shows universality in thickness-controlled growth of other 2D metal oxides. • 2D thin MoO 3 by this approach is easy to transfer, beneficial for device fabrication. Two-dimensional (2D) metal oxide α-MoO 3 shows great potentials because of its very high dielectric constant, air stability and anisotropic phonon polaritons. However, a method to produce ultrathin single crystalline α-MoO 3 with high transferability for functional device architecture is lacking. Herein, we report on the controllable synthesis of ultrathin α-MoO 3 single crystals via chemical vapor deposition (CVD) assisted by plasma pretreatment. We also carried out systematic computational work to explicate the mechanism for the slantly-oriented growth of thin nanosheets on plasma-pretreated substrate. The method possesses certain universality to synthesize other ultrathin oxide materials, such as Bi 2 O 3 and Sb 2 O 3 nanosheets. As-grown α-MoO 3 presents a high dielectric constant (≈40), ultrathin thickness (≈3 nm) and high transferability. Memristors with α-MoO 3 as the functional layers show excellent performance featuring high on/off ratio of approximately 10 4 , much lower set voltage around 0.5 V, and highly repetitive voltage sweep endurance. The power consumption of MoO 3 memristors is significantly reduced, resulted from reduced thickness of the MoO 3 nanosheets. Single crystal ultrathin α-MoO 3 shows great potentials in post-Moore memristor and the synthesis of CVD assisted by plasma pretreatment approach points to a new route for materials growth. Graphical abstract Download : Download high-res image (306KB) Download : Download full-size image
materials science, multidisciplinary,chemistry, physical,physics, applied
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